In this work, we present a physics-based model for a two-dimensional electron gas (2-DEG) density at heterointerface in AlGaN/GaN high electron mobility transistor (HEMT). One-dimensional Schrödinger-Poisson equations are solved self-consistently using a nonuniform mesh within the framework of the nextnano device simulation software. The 2-DEG density of AlGaN/GaN HEMT is investigated through the dependence of electron concentrations on various structural parameters such as barrier layer thickness, doping concentration, and the Al content. We report calculations of gate capacitance from charge density characteristics with respect to gate voltage. Good agreement between calculation and experiment is found.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.