In this work, we present a physics-based model for a two-dimensional electron gas (2-DEG) density at heterointerface in AlGaN/GaN high electron mobility transistor (HEMT). One-dimensional Schrödinger-Poisson equations are solved self-consistently using a nonuniform mesh within the framework of the nextnano device simulation software. The 2-DEG density of AlGaN/GaN HEMT is investigated through the dependence of electron concentrations on various structural parameters such as barrier layer thickness, doping concentration, and the Al content. We report calculations of gate capacitance from charge density characteristics with respect to gate voltage. Good agreement between calculation and experiment is found.
To study the structural, elastic, piezoelectric and dielectric properties of wurtzite (LaN), we have used the ab initio total-energy pseudo-potential plane-wave method (PP-PW) based on density functional theory (DFT) and density functional perturbation theory (DFPT), which performed with Generalized gradient approximation (GGA) as well as local density approximation (LDA). The calculations of piezoelectric constants by mean of linear-response calculations second derivative with respect to a strain and a modification of the electric field.The compound shows a large effective piezoelectric constant (𝑑 33 ) being in the order of 66.96, and 77.260 pc/N with (GGA), and (LDA) calculations, respectively. The dielectric properties and electromechanical coupling coefficients have been calculated. Finally, our piezoelectric findings indicate that the LaN compound has a high effective piezoelectric constant value (𝑑 33 ) which allows it to be in direct competitor of zinc oxide ZnO and aluminum nitride AIN. We hope that our findings provide guidelines for the experimental realization and further research of high-performance materials appropriate for applications in different fields of study, such as biomedical engineering.
In spite of progress in silicon technology, the end of Mosfet scaling can be anticipated for the year 2015 so the introduction of high permittivity gate dielectric is the envisaged solution to reduce the current leakage that drives up power consumption. In this paper we investigate the impact of different gate length on SOI double gate MOSFET when SiO2 is replaced by ZrO2 as the gate dielectric using Nextnano Simulator. The impact of the quantum effects also observed on performance parameters of the DG-MOSFET such as on current, off current, drain induced barrier lowering, and sub-threshold. It is observed that less EOT with high permittivity reduces the tunnel current and serves to maintain high drive current.
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