Capacitance and $S$-Parameter Techniques for Dielectric Characterization With Application to High-$k$ PMNT Thin-Film Layers

Complex Permittivity Determination of Thin-Films Through RF-Measurements of a MIM Capacitor

“…In this case, the admittance in Fig. 2(b) can be written as (1) where the real part of this admittance can be rearranged as (2) In accordance to (2), when obtaining from measured can be determined from the intercept with the ordinates of the linear regression of the versus curve, whereas , where is the slope of this regression. Bear in mind that this regression has to be performed at so low that the effect of on is negligible and thus the experimental data present linearity.…”

“…In this regard, it is necessary to know the parameters used as figures-of-merit for dielectrics: the relative permittivity and the loss tangent . Furthermore, obtaining these parameters from prototypes presenting a thickness comparable to those used in practical applications allows to include the impact of effects such as leakage currents [2], resulting in a more accurate characterization of the dielectric under normal operation conditions.…”

“…Typically, is obtained from capacitance-voltage (CV) and direct-current (dc) measurements performed to MIM capacitors [2]. However, these techniques only provide information at low frequency and neither allow to obtain nor as a function of .…”

“…Comparatively, MIM capacitors are simpler, require less die space, and allow to obtain and as a function of from one-port measurements [5]. Nevertheless, the parasitics inherent to the test fixture have to be properly modeled within the microwave range; otherwise, the extracted data may present unexpected fluctuations and even negative values [2]. In this regard, in [6] different equivalent circuits are investigated to reproduce experimental data corresponding to MIM capacitors, where the increased complexity of the model as frequency increases is pointed out.…”

A new method of dielectric characterization in the microwave range for high-k ferroelectric thin films

“…) topology is commonly used in order to characterize thin films, [1]- [4]. However, at high frequencies or in the case of a high permittivity, propagation phenomena reduce the apparent permittivity.…”