Complex Permittivity Determination of Thin-Films Through RF-Measurements of a MIM Capacitor

Abstract

A method for determining the permittivity and loss tangent of thin-film layers is presented. The method relies on the measurement of the reflection coefficient to a single metal-insulator-metal (MIM) structure without requiring additional de-embedding dummy structures to account for the test-fixture parasitics. Results allow to obtain the frequency-dependent dielectric parameters, whereas the impact of the test-fixture parasitics is quantified by developing the corresponding equivalent circuit model. The accuracy of this model is verified by obtaining excellent simulation-experiment correlation of the MIM admittance at microwave frequencies.

Modeling a mim capacitor including series resistance and inductance for characterizing nanometer high‐K dielectric films

“…Thus, the two fundamental figures‐of‐merit are determined as a function of frequency: the permittivity ( ε r ) and the loss tangent (tan δ ). Fortunately, S ‐parameters measured to transmission lines and MIM capacitors can be used for this purpose . Bear in mind, however, that these structures present parasitic effects, which impact the characterization process for the dielectric material and may yield unphysical results.…”

“…For this reason, in Ref. , a parameter extraction methodology was proposed by accounting for the series resistance of the metal plates that form the MIM capacitor. Nevertheless, the inductive effects have not been considered, which may substantially impact the extraction of ε r and tan δ at gigahertz frequencies.…”