Calibration Protocol for Broadband Near-Field Microwave Microscopy

Farina, Marco; Mencarelli, Davide; Donato, Andrea Di; Venanzoni, Giuseppe; Morini, Antonio

doi:10.1109/tmtt.2011.2161328

Cited by 63 publications

(28 citation statements)

References 13 publications

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“…[1][2][3][4][5] It combines the nanoscale spatial resolution of an Atomic Force Microscope (AFM) with the broadband (1-20 GHz) electrical measurement capabilities of the Vector Network Analyser (VNA). [19][20][21][22][23] Recently, a calibration workflow has been introduced to extract in situ (i.e. Depending on the impedance of the tip/sample interface, part of the microwave signal is reflected and measured by the VNA as scattering S 11 reflection signal.…”

Section: Introductionmentioning

confidence: 99%

Probing resistivity and doping concentration of semiconductors at the nanoscale using scanning microwave microscopy

et al. 2015

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We present a new method to extract resistivity and doping concentration of semiconductor materials from Scanning Microwave Microscopy (SMM) S11 reflection measurements. Using a three error parameters de-embedding workflow, the S11 raw data are converted into calibrated capacitance and resistance images where no calibration sample is required. The SMM capacitance and resistance values were measured at 18 GHz and ranged from 0 to 100 aF and from 0 to 1 MΩ, respectively. A tip-sample analytical model that includes tip radius, microwave penetration skin depth, and semiconductor depletion layer width has been applied to extract resistivity and doping concentration from the calibrated SMM resistance. The method has been tested on two doped silicon samples and in both cases the resistivity and doping concentration are in quantitative agreement with the data-sheet values over a range of 10(-3)Ω cm to 10(1)Ω cm, and 10(14) atoms per cm(3) to 10(20) atoms per cm(3), respectively. The measured dopant density values, with related uncertainties, are [1.1 ± 0.6] × 10(18) atoms per cm(3), [2.2 ± 0.4] × 10(17) atoms per cm(3), [4.5 ± 0.2] × 10(16) atoms per cm(3), [4.5 ± 1.3] × 10(15) atoms per cm(3), [4.5 ± 1.7] × 10(14) atoms per cm(3). The method does not require sample treatment like cleavage and cross-sectioning, and high contact imaging forces are not necessary, thus it is easily applicable to various semiconductor and materials science investigations.

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Section: Introductionmentioning

confidence: 99%

Probing resistivity and doping concentration of semiconductors at the nanoscale using scanning microwave microscopy

et al. 2015

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“…ΔS 11 thus measures a change in S 11 and consequently the change in Z L as the probe passes from a SiO 2 region to a metal pad. Following [12], the |ΔS 11 | data were then converted to capacitance using the relation α Δ = C S * tot 11 and fitted with a circuit model. The model consists of stray capacitance caused by the cantilever C cant in parallel with three additional capacitances in series: tip capacitance C tip due to the 12 nm Al 2 0 3 ALD passivation layer, dielectric capacitance C diel from the SiO 2 layer under the microcapacitor, and back or parasitic where A tip is the area of the NW surface, A diel is the area of the microcapacitor, t tip is the thickness of the outer Al 2 O 3 ALD layer, t diel is the thickness of the SiO 2 layer, ε tip is the permittivity of Al 2 O 3 , and ε diel is the permittivity of SiO 2 .…”

Section: Resultsmentioning

confidence: 99%

GaN nanowire coated with atomic layer deposition of tungsten: a probe for near-field scanning microwave microscopy

Weber¹,

Blanchard²,

Sanders³

et al. 2014

Nanotechnology

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GaN nanowires were coated with tungsten by means of atomic layer deposition. These structures were then adapted as probe tips for near-field scanning microwave microscopy. These probes displayed a capacitive resolution of ~0.03 fF, which surpasses that of a commercial Pt tip. Upon imaging of MoS₂ sheets with both the Pt and GaN nanowire tips, we found that the nanowire tips were comparatively immune to surface contamination and far more durable than their Pt counterparts.

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“…Changes in the 11 signal are thus the direct result of changes in the tip-sample admittance, and directly reflect the local sample conductivity and geometry. Here, we report uncalibrated S 11 measurements, though calibration approaches for SMM are reported in the literature [7]- [9].…”

Section: Methodsmentioning

confidence: 99%

Near-field microwave microscopy of one-dimensional nanostructures

Berweger

Blanchard

Quardokus

et al. 2016

2016 IEEE MTT-S International Microwave Symposium (IMS)

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With the ability to measure sample conductivity with nanometer spatial resolution, scanning microwave microscopy (SMM) is a powerful tool to study nanoscale electronic systems and devices. Here we demonstrate the general capability to image electronic variations within nanomaterials using nanowires of VO2 and Si as model systems. For VO2 we image the temperature-dependent metal-insulator domain coexistence that arises due to the built-in strain in substrate-clamped wires. In Si NWs integrated into a transistor device architecture we observe large increases in the source-drain current with the tip passing over the wire, correlated with variations in the SMM signal. We attribute this effect to local rectification of the microwave signal by the local tip-sample Schottky junction.

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Calibration Protocol for Broadband Near-Field Microwave Microscopy

Cited by 63 publications

References 13 publications

Probing resistivity and doping concentration of semiconductors at the nanoscale using scanning microwave microscopy

Probing resistivity and doping concentration of semiconductors at the nanoscale using scanning microwave microscopy

GaN nanowire coated with atomic layer deposition of tungsten: a probe for near-field scanning microwave microscopy

Near-field microwave microscopy of one-dimensional nanostructures

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