GaN nanowire coated with atomic layer deposition of tungsten: a probe for near-field scanning microwave microscopy

Weber, Joel C.; Blanchard, Paul T.; Sanders, Aric W.; Gertsch, Jonas C.; George, Steven M.; Berweger, Samuel; Imtiaz, Atif; Coakley, Kevin J.; Wallis, Thomas M.; Bertness, Kristine A.; Kaboš, Pavel; Sanford, Norman A.; Bright, Victor M.

doi:10.1088/0957-4484/25/41/415502

Cited by 6 publications

(1 citation statement)

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“…Moreover, the electrical properties of GaN tips can be easily modified by varying the doping, which avoids the need for metal coatings. Recently, Weber et al reported using Ti/Al and tungsten coated GaN NW probes for near-field scanning microwave microscopy in AFM [19,20]. However, no data was shown to illustrate image resolution capabilities for scanning high-aspect-ratio structures or to compare the durability of these tips with conventional probes.…”

Section: Introductionmentioning

confidence: 99%

GaN nanowire tips for nanoscale atomic force microscopy

et al. 2017

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Imaging of high-aspect-ratio nanostructures with sharp edges and straight walls in nanoscale metrology by atomic force microscopy (AFM) has been challenging due to the mechanical properties and conical geometry of the majority of available commercial tips. Here we report on the fabrication of GaN probes for nanoscale metrology of high-aspect-ratio structures to enhance the resolution of AFM imaging and improve the durability of AFM tips. GaN nanowires were fabricated using bottom-up and top-down techniques and bonded to Si cantilevers to scan vertical trenches on Si substrates. Over several scans, the GaN probes demonstrated excellent durability while scanning uneven structures and showed resolution enhancements in topography images, independent of scan direction, compared to commercial Si tips.

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Section: Introductionmentioning

confidence: 99%

GaN nanowire tips for nanoscale atomic force microscopy

et al. 2017

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Instrumentation for Near-Field Scanning Microwave Microscopy

Wallis¹,

Kaboš²

2017

Measurement Techniques for Radio Frequency Nanoelectronics

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Research Update: The materials genome initiative: Data sharing and the impact of collaborative ab initio databases

2016

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Materials innovations enable new technological capabilities and drive major societal advancements but have historically required long and costly development cycles. The Materials Genome Initiative (MGI) aims to greatly reduce this time and cost. In this paper, we focus on data reuse in the MGI and, in particular, discuss the impact of three different computational databases based on density functional theory methods to the research community. We also discuss and provide recommendations on technical aspects of data reuse, outline remaining fundamental challenges, and present an outlook on the future of MGI’s vision of data sharing.

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GaN nanowire coated with atomic layer deposition of tungsten: a probe for near-field scanning microwave microscopy

Cited by 6 publications

References 43 publications

GaN nanowire tips for nanoscale atomic force microscopy

GaN nanowire tips for nanoscale atomic force microscopy

Instrumentation for Near-Field Scanning Microwave Microscopy

Research Update: The materials genome initiative: Data sharing and the impact of collaborative ab initio databases

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