Calculations on the properties of helium in silicon

Kaplan, Dean; Weigel, C.; Corbett, J. W.

doi:10.1002/pssb.2220940204

Cited by 18 publications

(2 citation statements)

References 30 publications

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“…An uncertainty also exists about the localization of single impurity noble gas atonis in crystal lattice. Extended-Huckel-theory calculations are only known [3], according to which helium impurity atoms may be located in tetrahedral inter-stitial posit>ions of t'he silicon lattice without energy level formation in the forbidden gap, i.e. not exhibiting electrical and optical activity.…”

Section: Introductionmentioning

confidence: 99%

Noble Gas Atoms as Chemical Impurities in Silicon

Tkachev

Мудрый

Minaev

1984

Phys. Stat. Sol. (a)

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The behaviour of noble gas atoms implanted in silicon is studied by the luminescence method. The energy position of Mossbauer-type luminescence bands with zero-phonon lines 1.0148, 1.0120, 1.0097, 1.0048 eV and others connected with implanted atoms of neon, helium, argon, krypton, respectively, indicates the formation of deep energy levels in the forbidden gap of silicon. Implantation of the noble gas isotopes confirms their participation in formation processes of the luminescence centers in silicon. The temperature range of existence and the symmetry of defects incorporating the noble gas atoms are found. It is noted that noble gas atoms form impurity complexes with deep energy levels and their behaviour in crystals does not differ from that of main doped or residual technological impurity atoms.-~ 1) Leninskii prospekt 65, Minsk 220027, USSR.

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Section: Introductionmentioning

confidence: 99%

Noble Gas Atoms as Chemical Impurities in Silicon

Tkachev

Мудрый

Minaev

1984

Phys. Stat. Sol. (a)

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“…In what refers to theoretical understanding of noble gas atoms in silicon only Extend-Huckel-theory calculations are known [3,4]. An uncertainty exists about the localization of single-impurity noble gas atoms in the crystal lattice.…”

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The noble gas atoms as impurities in silicon

Chacham¹,

Alves²,

Siqueria³

et al. 1986

Int. J. Quantum Chem.

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Ground state one-electron energies have been calculated for the substitutional and interstitial helium, neon, and argon impurities in silicon by use of the self-consistent-field multiple-scattering X, method within the framework of the Watson-sphere-terminated molecular cluster model. The substitutional noble gas atoms are found to inhibit the rebonding of the first neighbor's dangling bonds through orthogonality repulsion. The interstitial nobel gas atoms induce empty shallow levels close to the bottom of the conduction band. We tentatively relate these levels to the emission bands observed for silicon crystals implanted with helium, neon, and argon.

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Effect of Noble Gas Atoms on the Energy Spectrum of Defects in Semiconductors

Zhevno

Sidorik

Tkachev

1980

Physica Status Solidi (b)

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Short Notes K113 phys. stat. sol. (b)102, -K113 (1980) Subject classification: 13.4; 22.1.2 V. I. Lenin Belorussian State University, Minsk Effect of Noble Gas Atoms on the Energy Spectrum of Defects in Semiconductors BY 1) A. N. ZHEVNO, V.V. SIDOWK, and V.D. TKACHEVRecent results /1/ have shown that in luminescence spectra of silicon irradiated with ions of He, Ne, Ar, and K r atoms emission lines with a specific long-wave

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Calculations on the properties of helium in silicon

Cited by 18 publications

References 30 publications

Noble Gas Atoms as Chemical Impurities in Silicon

Noble Gas Atoms as Chemical Impurities in Silicon

The noble gas atoms as impurities in silicon

Effect of Noble Gas Atoms on the Energy Spectrum of Defects in Semiconductors

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