CaF<sub>2</sub>/CdF<sub>2</sub> Double-Barrier Resonant Tunneling Diode with  High Room-Temperature Peak-to-Valley Ratio

Watanabe, M.; Funayama, Toshiyuki; Teraji, Taishi; Sakamaki, N.

doi:10.1143/jjap.39.l716

Cited by 48 publications

(34 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…7,8 The performance of these devices has been improved by special deposition techniques which reduce the dewetting of Si on CaF 2 films. 9,10 Other RTD structures use lattice matched CdF 2 as alternative material for the quantum well 11 while Si-based CdF 2 / CaF 2 intersubband quantum cascade structures are realized to obtain electroluminescence at room temperature. 12 Both electroluminescence and photoluminescence ͑PL͒ have been observed for Si-based MnF 2 / CaF 2 heterostructures, too.…”

Section: Introductionmentioning

confidence: 99%

Structural transitions and relaxation processes during the epitaxial growth of ultrathinCaF2films on Si(111)

et al. 2010

View full text Add to dashboard Cite

The structure and morphology of ultrathin lattice matched CaF 2 films of very few monolayers thickness, which were deposited on Si͑111͒ substrates by molecular-beam epitaxy, have been studied in situ by synchrotron based grazing incidence x-ray diffraction. Even for the thinnest investigated film of three monolayers thickness, the in-plane structure of the CaF 2 film is determined by a lateral separation in two domains: a pseudomorphic phase assuming the lateral lattice constant of the Si͑111͒ substrate and a completely relaxed phase. Analysis of the crystal truncation rods verifies that both phases adopt the entire homogeneous CaF 2 film thickness. Therefore, we propose that atomic steps of the substrate bypass the nucleation barrier for the formation of ͑Shockley partial͒ dislocations so that the film starts to relax below the classical critical film thickness. While the relaxed phase assumes also the CaF 2 bulk lattice constant for the vertical direction, the vertical lattice constant of the pseudomorphic phase increases due to the compressive lateral strain at the interface. This vertical expansion of the pseudomorphic phase, however, is larger than expected from the elastic constants of the CaF 2 bulk. The fraction of the pseudomorphic CaF 2 phase decreases with increasing film thickness. The interface between the pseudomorphic CaF 2 phase and the Si͑111͒ substrate is characterized by Ca on T 4 sites, a smaller distance between the Si͑111͒ substrate and the CaF interface layer and an expanded layer distance between CaF interface layer and the completely stoichiometric CaF 2 film.

show abstract

Section: Introductionmentioning

confidence: 99%

Structural transitions and relaxation processes during the epitaxial growth of ultrathinCaF2films on Si(111)

et al. 2010

View full text Add to dashboard Cite

show abstract

“…[3][4][5][6][7][8] However, up to now, the substrate orientation of high-performance CdF 2 / CaF 2 RTDs has been limited to ͑111͒Si because this orientation is suitable for the epitaxial growth of CaF 2 , mainly because of the stability of the surface energy of ͑111͒CaF 2 / Si compared with those of other orientations. Current-voltage characteristics were investigated and the authors observed negative differential resistance ͑NDR͒ characteristics at room temperature.…”

mentioning

confidence: 99%

Room temperature negative differential resistance of CdF2∕CaF2 double-barrier resonant tunneling diode structures grown on Si(100) substrates

Kanazawa

Fujii

Wada

et al. 2007

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

The authors have demonstrated the crystal growth of CaF2∕CdF2∕CaF2 multilayered heterostructures on Si(100) substrates as double-barrier resonant tunneling diode structures by a low-temperature growth technique. Current-voltage characteristics were investigated and the authors observed negative differential resistance (NDR) characteristics at room temperature. The peak-to-valley current ratio was 2–8, and 13 at maximum, and peak current density was 80–90A∕cm2. The quantum-well layer thickness dependence of NDR peak voltages is also discussed on the basis of qualitative analytical model using the Esaki-Tsu formula.

show abstract

“…It has also exhibited the highest peak current density of 478 mm cm , equivalent to 66.9 cm with the gate width of 140 m, with excellent off-resonance performance as compared to others [3]- [6]. Though extremely high PVCR value on the order of was presented by Watanabe et al [20], yet the significant -related defects during sample growth and incompatibility to semiconductor monolithic integration strongly limited its applications. On the other hand, device processing of this letter is fully compatible to current compound semiconductor technology, making it suitable for application in monolithic MMICs.…”

Section: Resultsmentioning

confidence: 99%

Monolithic AlAs-InGaAs-InGaP-GaAs HRT-FETS with PVCR of 960 at 300 K

Lee

Hsu

Huang

et al. 2005

IEEE Electron Device Lett.

View full text Add to dashboard Cite

This letter reports the significant N-shaped negative-differential resistance characteristics with three-terminal controllability of a monolithic heterostructure resonant tunneling field-effect transistor, realized by integrating the AlAs-In 0 25 Ga 0 75 As-AlAs double-barrier single-well resonant tunneling (RT) structure into the drain regime of the In 0 49 Ga 0 51 P-In 0 25 Ga 0 75 As-GaAs -high-electron mobility transistor. A peak-to-valley current ratio in excess of 960 at room temperature has been demonstrated, with a peak current density ( ) of 50.6 mA/mm, and a valley current density ( ) of 52.7 A mm, respectively, with a transistor gate length of 1.0 m. The maximum current drive density was observed to be 478 A mm-cm 2 .Index Terms-Heterostructure resonant tunneling field-effect transistor (HRT-FET), high-electron mobility transistor (HEMT), negative-differential resistance (NDR), peak-to-valley current ratio (PVCR), resonant tunneling (RT).

show abstract

CaF₂/CdF₂ Double-Barrier Resonant Tunneling Diode with High Room-Temperature Peak-to-Valley Ratio

Cited by 48 publications

References 12 publications

Structural transitions and relaxation processes during the epitaxial growth of ultrathinCaF2films on Si(111)

Structural transitions and relaxation processes during the epitaxial growth of ultrathinCaF2films on Si(111)

Room temperature negative differential resistance of CdF2∕CaF2 double-barrier resonant tunneling diode structures grown on Si(100) substrates

Monolithic AlAs-InGaAs-InGaP-GaAs HRT-FETS with PVCR of 960 at 300 K

Contact Info

Product

Resources

About

CaF2/CdF2 Double-Barrier Resonant Tunneling Diode with High Room-Temperature Peak-to-Valley Ratio

Cited by 48 publications

References 12 publications

Structural transitions and relaxation processes during the epitaxial growth of ultrathinCaF2films on Si(111)

Structural transitions and relaxation processes during the epitaxial growth of ultrathinCaF2films on Si(111)

Room temperature negative differential resistance of CdF2∕CaF2 double-barrier resonant tunneling diode structures grown on Si(100) substrates

Monolithic AlAs-InGaAs-InGaP-GaAs HRT-FETS with PVCR of 960 at 300 K

Contact Info

Product

Resources

About

CaF₂/CdF₂ Double-Barrier Resonant Tunneling Diode with High Room-Temperature Peak-to-Valley Ratio