Cadmium ion soaking treatment for solution processed CuInSxSe2−x solar cells and its effect on defect properties

Hou, William W.; Li, Sheng-Han; Yang, Wan Suk; Chung, Choong‐Heui; Yang, Yang

doi:10.1016/j.solmat.2011.04.010

Cited by 17 publications

(29 citation statements)

References 39 publications

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“…Caution: Hydrazine is toxic and highly reactive and should be handled with appropriate protective equipment in order to pre v ent contact with either the vapors or liquid . A detailed description of the preparation procedure for the CIS precursor solutions and films can be found elsewhere 18–21…”

Section: Methodsmentioning

confidence: 99%

“…However, significant cost reductions as well as large scale production are necessary to compete with conventional electrical power generation. Most research efforts have been dedicated to the development of non‐vacuum deposition methods for the preparation of the absorber layer in an effort to reduce the cost of producing these devices 10–21. In order for an absorber deposited under atmospheric conditions to significantly offset production costs, it is vital to replace the sputtered i‐ZnO and sputtered ITO or aluminum doped zinc oxide (AZO) layers with transparent conductors that are also compatible with atmospheric deposition on a manufacturing‐scale.…”

mentioning

confidence: 99%

“…Building on our earlier works on solution processed CIS films and devices,18, 19 we employed a newly developed nanocomposite transparent electrode composed of an interspersed AgNW mesh and ITO‐NP film that is capable of producing high performance fully solution‐processed CIS photovoltaic devices. Devices fabricated using these top electrodes offer PCE values of 10.3%, which is higher than the 9.35% PCE produced by using conventional sputtered i‐ZnO/ITO contacts.…”

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confidence: 99%

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Silver Nanowire Composite Window Layers for Fully Solution‐Deposited Thin‐Film Photovoltaic Devices

et al. 2012

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A silver nanowire-indium tin oxide nanoparticle composite and its successful application to fully solution processed CuInSe(2) solar cells as a window layer are demonstrated, effectively replacing the traditionally sputtered both intrinsic zinc oxide and indium tin oxide layers. The devices utilizing the nanocomposite window layer demonstrate photovoltaic parameters equal to or even beyond those with sputtered intrinsic zinc oxide and indium tin oxide contacts.

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Section: Methodsmentioning

confidence: 99%

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confidence: 99%

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Silver Nanowire Composite Window Layers for Fully Solution‐Deposited Thin‐Film Photovoltaic Devices

et al. 2012

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“…Keeping in view of this, Al was used as a replacement for In. In the past, CIS thin films have been prepared using different techniques such as co-evaporation [1], molecular deposition [2], and solution processing [3] etc. Multi-source evaporation was used to grow the absorber films and the buffer layer.…”

Section: Methodsmentioning

confidence: 99%

Growth and study of CuIn1-xAlxSe2 thin films for photovoltaic applications

Kekuda

Nagaraju

Krupanidhi

2012

AIP Conference Proceedings

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Chalcopyrite semiconductors such as CuIn 1-x Al x Se 2 have been currently investigated as a promising material for photovoltaic applications since their band gap energy matches with the solar spectrum. The absorber layers as thin as 2Pm are sufficient for the absorption of the visible part of sun light, because they are characterized by a high absorption coefficient. The absorber layers are grown by the multi-source evaporation technique. From the X-ray analysis it is found that the films had a preferred oriented along the (112) direction, which confirmed the chalcopyrite phase. The optical studies revealed that replacing 50% of In by Al, will bring the band gap energy to 1.5eV, which will match the solar spectrum. Photo-response of the heterostructure is presented.

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“…The detailed solutions and the films preparation can be found elsewhere. 5,8,13 The films were annealed on a hot plate at a maximum temperature of 390 C for 30 min, and the final film thickness was around 1 to 1.2 lm. All of the processes described above were completed in a nitrogen-filled drybox.…”

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Studies of carrier recombination in solution-processed CuIn(S,Se)2 through photoluminescence spectroscopy

Duan

Tang

Hsu

et al. 2013

Applied Physics Letters

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We investigated the effects of the cadmium sulfide (CdS) layer on defect passivation in hydrazinebased CuIn(S,Se) 2 (CISSe) samples through photoluminescence measurements. Significant changes in the emission profile of the CISSe film are observed after a CdS layer is deposited on CISSe. It is likely that Cd diffusion into the CISSe film becomes more severe as a result of the fine grain size of our solution-processed films. Enhanced emission yields and longer carrier lifetimes are, thus, observed in Cd-treated (CdS-coated or Cd-soaked) CISSe films, indicating the action of Cd ions on Cu vacancies sites and a decrease in non-radiative recombination. V

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Cadmium ion soaking treatment for solution processed CuInSxSe2−x solar cells and its effect on defect properties

Cited by 17 publications

References 39 publications

Silver Nanowire Composite Window Layers for Fully Solution‐Deposited Thin‐Film Photovoltaic Devices

Silver Nanowire Composite Window Layers for Fully Solution‐Deposited Thin‐Film Photovoltaic Devices

Growth and study of CuIn1-xAlxSe2 thin films for photovoltaic applications

Studies of carrier recombination in solution-processed CuIn(S,Se)2 through photoluminescence spectroscopy

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