To improve the performance of the polycrystalline thin film devices, it requires a delicate control of its grain structures. As one of the most promising candidates among current thin film photovoltaic techniques, the organic/inorganic hybrid perovskites generally inherit polycrystalline nature and exhibit compositional/structural dependence in regard to their optoelectronic properties. Here, we demonstrate a controllable passivation technique for perovskite films, which enables their compositional change, and allows substantial enhancement in corresponding device performance. By releasing the organic species during annealing, PbI2 phase is presented in perovskite grain boundaries and at the relevant interfaces. The consequent passivation effects and underlying mechanisms are investigated with complementary characterizations, including scanning electron microscopy (SEM), X-ray diffraction (XRD), time-resolved photoluminescence decay (TRPL), scanning Kelvin probe microscopy (SKPM), and ultraviolet photoemission spectroscopy (UPS). This controllable self-induced passivation technique represents an important step to understand the polycrystalline nature of hybrid perovskite thin films and contributes to the development of perovskite solar cells judiciously.

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In this work, we describe details of a two-step deposition approach that enables the preparation of continuous and well-structured thin films of Cs 2 SnI 6 , which is a one-half Sndeficient 0-D perovskite derivative (i.e., the compound can also be written as CsSn 0.5 I 3 , with a structure consisting of isolated SnI 6 4− octahedra). The films were characterized using powder X-ray diffraction (PXRD), scanning electron microscopy (SEM), thermogravimetric analysis (TGA), UV−vis spectroscopy, photoluminescence (PL), photoelectron spectroscopy (UPS, IPES, XPS), and Hall effect measurements. UV−vis and PL measurements indicate that the obtained Cs 2 SnI 6 film is a semiconductor with a band gap of 1.6 eV. This band gap was further confirmed by the UPS and IPES spectra, which were well reproduced by the calculated density of states with the HSE hybrid functional. The Cs 2 SnI 6 films exhibited n-type conduction with a carrier density of 6(1) × 10 16 cm −3 and mobility of 2.9(3) cm 2 /V•s. While the computationally derived band structure for Cs 2 SnI 6 shows significant dispersion along several directions in the Brillouin zone near the band edges, the valence band is relatively flat along the Γ−X direction, indicative of a more limited hole minority carrier mobility compared to analogous values for the electrons. The ionization potential (IP) and electron affinity (EA) were determined to be 6.4 and 4.8 eV, respectively. The Cs 2 SnI 6 films show some enhanced stability under ambient air, compared to methylammonium lead(II) iodide perovskite films stored under similar conditions; however, the films do decompose slowly, yielding a CsI impurity. These findings are discussed in the context of suitability of Cs 2 SnI 6 for photovoltaic and related optoelectronic applications.

Lead thiocyanate in the perovskite precursor can increase the grain size of a perovskite thin film and reduce the conductivity of the grain boundaries, leading to perovskite solar cells with reduced hysteresis and enhanced fill factor. A planar perovskite solar cell with grain boundary and interface passivation achieves a steady-state efficiency of 18.42%.

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Thin film photovoltaic cells based on hybrid halide perovskite absorbers have emerged as promising candidates for next generation photovoltaics. Here, we have characterized and identified the defect energy distribution in the CH3NH3PbI3 perovskite using admittance spectroscopy, which reveals a deep defect state ∼0.16 eV above the valence band. According to theoretical calculations, the defect state is possibly attributed to iodine interstitials (Ii), which can become the non-radiative recombination centers in the absorber.

Solution-processed metallic nanowire thin film is a promising candidate to replace traditional indium tin oxide as the next-generation transparent and flexible electrode. To date however, the performance of these electrodes is limited by the high contact resistance between contacting nanowires; so improving the point contacts between these nanowires remains a major challenge. Existing methods for reducing the contact resistance require either a high processing power, long treatment time, or the addition of chemical reagents, which could lead to increased manufacturing cost and damage the underlying substrate or device. Here, a nanoscale point reaction process is introduced as a fast and low-power-consumption way to improve the electrical contact properties between metallic nanowires. This is achieved via current-assisted localized joule heating accompanied by electromigration. Localized joule heating effectively targets the high-resistance contact points between nanowires, leading to the automatic removal of surface ligands, welding of contacting nanowires, and the reshaping of the contact pathway between the nanowires to form a more desirable geometry of low resistance for interwire conduction. This result shows the interplay between thermal and electrical interactions at the highly reactive nanocontacts and highlights the control of the nanoscale reaction as a simple and effective way of turning individual metallic nanowires into a highly conductive interconnected nanowire network. The temperature of the adjacent device layers can be kept close to room temperature during the process, making this method especially suitable for use in devices containing thermally sensitive materials such as polymer solar cells.

High‐performance inverted solar cells using various low‐bandgap polymers are achieved by using excellent metal oxide nanoparticles including ZnO and TiO2:Cs nanoparticles as an electron‐transport layer (ETL). Power conversion efficiencies (PCE) as high as 7.3% are achieved with inverted single cells based on PTB7:PC71BM. The results give a guideline for high‐efficiency and stable inverted single‐junction and tandem polymer solar cells.