1994
DOI: 10.1016/0040-6090(94)90649-1
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C-growth of d.c.-sputtered Mo and W thin films

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Cited by 12 publications
(5 citation statements)
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“…Differentiating the SCLC cases with uniform and non-uniform spatial trap distributions is a very important problem. As was shown earlier [9], it is possible to tell the difference between the two cases thanks to the analysis of the log(I/V 2 ) versus log L dependence, provided that T c /T differs from unity (T c is the so-called characteristic temperature [8]). In the case of shallow traps the thickness dependencies are usually very similar for the uniform and non-uniform trap distributions [8].…”
Section: Resultsmentioning
confidence: 96%
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“…Differentiating the SCLC cases with uniform and non-uniform spatial trap distributions is a very important problem. As was shown earlier [9], it is possible to tell the difference between the two cases thanks to the analysis of the log(I/V 2 ) versus log L dependence, provided that T c /T differs from unity (T c is the so-called characteristic temperature [8]). In the case of shallow traps the thickness dependencies are usually very similar for the uniform and non-uniform trap distributions [8].…”
Section: Resultsmentioning
confidence: 96%
“…In our previous paper the solutions of the SCLC problem for deep traps were presented [9]. Equations (3), ( 5), ( 6) and ( 7) enable us to solve the problem for traps of any depth.…”
Section: Resultsmentioning
confidence: 99%
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