2005
DOI: 10.1016/j.tsf.2005.05.003
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Effect of substrate properties and thermal annealing on the resistivity of molybdenum thin films

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Cited by 32 publications
(10 citation statements)
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“…Upon heating compressive stress is introduced in all films. The recrystallization temperature of Mo is > 900°C and therefore very little change in structural and electrical properties would be expected at temperatures below 650°C [18].…”
Section: -Power Density Effectmentioning
confidence: 99%
“…Upon heating compressive stress is introduced in all films. The recrystallization temperature of Mo is > 900°C and therefore very little change in structural and electrical properties would be expected at temperatures below 650°C [18].…”
Section: -Power Density Effectmentioning
confidence: 99%
“…Data from [19] show the influence of substrate properties (e.g., roughness characteristics and chemical composition) on the electrical resistivity of Mo evaporated on silicon-based substrates vs. film thickness and post-deposition annealing temperatures up to~900 • C. A resistivity around 80-90 µΩ·cm, a value quite high according to the Fuchs-Sondheimer model [23], was obtained in these multiphase films. In [20,21] other Mo films with a thickness of 500 nm showed an electrical resistivity in the range 8-23 µΩ·cm, quite a low value, close to the resistivity of Mo bulk (5.46 µΩ·cm) [20,21].…”
Section: Resultsmentioning
confidence: 98%
“…In recent years several studies have been performed to characterize Mo films grown on flat substrates undergoing different thermal treatments [13][14][15][18][19][20][21]. As underlined in the introduction, molybdenum is an attractive coating material thanks to either its high thermal and electrical conductivity, or its excellent mechanical properties.…”
Section: Resultsmentioning
confidence: 99%
“…Despite these changes to the multilayer nature of the films, the underlying columnar grain structure remained stable up 650 °C, which represents the typical temperature for the onset of grain growth in columnar nanocrystalline Mo thin films. [58] Disappearance of the Au-rich layers was accompanied by enhanced contrast of the underlying columnar grain structure, which suggests that diffusing Au atoms segregated to the grain boundaries. At 600 °C in Figure 4c, spherical clusters appeared to form in select regions of the fading Au-rich layers (indicated by red arrows), and these clusters became larger and elongated at the highest temperature of 650 °C in Figure 4d.…”
Section: Microstructural Stabilization By Grain Boundary Segregationmentioning
confidence: 99%