Burn-in effect in InGaP/GaAs HBT with intrinsically or extrinsically carbon doped base layer

Abstract

InGaP/GaAs heterojunction bipolar transistors (HBTs) with intrinsically or extrinsically carbon doped base layers were grown by metal-organic chemical vapor deposition. Burn-in effect and the influence of thermal annealing at different temperatures on these devices were investigated. Results show that the intrinsically-carbon-doped HBTs demonstrate a higher current gain of 155 and a burn-in value of 24.0%, while the extrinsically-carbon-doped HBTs show a current gain of 92 and a burn-in value of 5.3%. Thermal annealing after exposing the base layer decreases the burn-in value from 24.0% to 5.7% and from 5.3% to 1.3% for intrinsically and extrinsically carbon doped HBTs, respectively, proved to be an effective method to eliminate the burn-in effect of HBT devices by hydrogen out diffusion. However, it also damages the base layer quality, leading to increased base recombination current and decreased current gain.

Modeling and Direct Extraction of Parameters for GaAs HBT Small- Signal Equivalent Circuit

“…Following Eqs. ( 1) to (7), the calculations yield the following results: R1 = 3 kΩ, R2 ≈ 1kΩ, R3 = 73 Ω, Rbe1 = Rbe2 = 190 Ω. Once the aforementioned fixed resistances have been calculated, gm can be determined by measuring the potentials at the RF-IN and RF-OUT pins in Fig.…”

“…Dynamic extraction pertains to the parasitic parameters within the transistor and the transistor's intrinsic parameters affected by frequency. As a transistor's amplification performance hinges on its static point when operating within a linear amplification area [7,21], it becomes imperative to extract its static parameters under static conditions. Subsequently, based on the frequency response and gain characteristics, calculating and predicting parasitic parameters under dynamic conditions becomes essential.…”

“…Following the model structure described in reference [28], two HBTs are directly cascaded and then linked to the corresponding resistance according to the connection method. The selection of parameters initially refers to the magnitude order of the parameters extracted in [7,23,30], which are subsequently fine-tuned based on the simulation results.…”

“…GaAs HBT offers advantages such as high cutoff frequency, substantial current gain, and minimal noise. Leveraging these benefits, low-noise amplifiers employing GaAs HBT as the amplification unit find extensive use in aerospace, electronic information, and other fields [4][5][6][7][8][9]. Modeling RF devices serves a dual purpose: it enhances the success rate of circuit design and facilitates the analysis of electromagnetic compatibility characteristics within the RF system.…”

Investigation of Hydrogen Flux Influence on InGaP Layer and Device Uniformity

“…The heterojunction's broad process tolerance ensures stable performance across different fabrication conditions. Coupled with high yields and a manufacturing process, these attributes facilitate large-scale production and applications, positioning InGaP/GaAs heterojunctions as a formidable choice in advanced semiconductor technologies [16][17][18][19][20][21][22][23][24][25][26]. The integration of large-size epitaxial wafers into semiconductor manufacturing significantly enhances production efficiency and material usage, thereby reducing the cost per unit area.…”