Abstract:The growth of 6-inch In0.485Ga0.515P has been examined in this study. The effects of growth temperature, the V/III ratio, and the H2 total flow on solid composition, growth rate, and crystal quality have been systematically investigated and discussed. Additionally, the effect of growth conditions on doping efficiency has been investigated. Finally, the relationship between electrical uniformity, optical uniformity, and the growth conditions of the 6-in epitaxial layer is discussed. At a growth temperature of 6… Show more
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