Buried p-type layers in Mg-doped InN

Anderson, P. A.; Swartz, C. H.; Carder, D.A.; Reeves, Roger J.; Durbin, Steven M.; Chandril, Sandeep; Myers, T. H.

doi:10.1063/1.2378489

Cited by 99 publications

(62 citation statements)

References 18 publications

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“…Photoluminescence is observed only from the two samples with the lowest Mg concentration, consistent with previous reports of PL being quenched by Mg doping [14,19,20]. A plausible interpretation of this behavior is that trap states in the bulk of the film are emptied as the Fermi level drops, opening up nonradiative recombination paths for the photoexcited carriers.…”

Section: Photoluminescencesupporting

confidence: 74%

“…A plausible interpretation of this behavior is that trap states in the bulk of the film are emptied as the Fermi level drops, opening up nonradiative recombination paths for the photoexcited carriers. This view is supported indirectly by the observation that PL is quenched for Mg concentrations roughly greater than or equal to the residual donor concentration [14,19].…”

Section: Photoluminescencesupporting

confidence: 60%

“…Contributions to the measured Seebeck coefficient from n-type regions (i.e., the film surface and interface with substrate/buffer layers below) are evaluated using a parallel conduction model. Photoluminescence (PL) in Mg-doped InN has been reported to disappear above a threshold Mg concentration [9,14,19,20]. Here, we show the threshold corresponds to the onset of hole conductivity, and the disappearance of PL is attributed to electron trapping by unoccupied defect states when the Fermi energy shifts towards the valence band edge.…”

Section: Introductionmentioning

confidence: 74%

“…Modeling of variable magnetic field Hall effect measurements using fields up to 12 Tesla is consistent with the presence of both electrons and holes in Mg-doped InN [14]. Noting that "hot probe" measurements can qualitatively distinguish between n-type and p-type In-rich InGaN samples [15], we suggest quantitative measurement of the Seebeck coefficient as a direct method to characterize hole transport and confirm p-type conductivity in Mg-doped InN.…”

Section: Introductionmentioning

confidence: 83%

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Hole transport and photoluminescence in Mg-doped InN

Miller

Ager

Smith

et al. 2010

Journal of Applied Physics

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Hole conductivity and photoluminescence were studied in Mg-doped InN films grown by molecular beam epitaxy. Because surface electron accumulation interferes with carrier type determination by electrical measurements, the nature of the majority carriers in the bulk of the films was determined using thermopower measurements. Mg concentrations in a "window" from ca. 3 × 10 17 to 1 × 10 19 cm −3 produce hole-conducting, p-type films as evidenced by a positive Seebeck coefficient. This conclusion is supported by electrolyte-based capacitance voltage measurements and by changes in the overall mobility observed by Hall effect, both of which are consistent with a change from surface accumulation on an n-type film to surface inversion on a p-type film. The observed Seebeck coefficients are understood in terms of a parallel conduction model with contributions from surface and bulk regions. In partially compensated films with Mg concentrations below the window region, two peaks are observed in photoluminescence at 672 meV and at 603 meV. They are attributed to band-to-band and band-to-acceptor transitions, respectively, and an acceptor binding energy of ∼70 meV is deduced. In hole-conducting films with Mg concentrations in the window region, no photoluminescence is observed; this is attributed to electron trapping by deep states which are empty for Fermi levels close to the valence band edge. * Corresponding author: JWAger@lbl.gov

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Section: Photoluminescencesupporting

confidence: 74%

Section: Photoluminescencesupporting

confidence: 60%

Section: Introductionmentioning

confidence: 74%

Section: Introductionmentioning

confidence: 83%

See 2 more Smart Citations

Hole transport and photoluminescence in Mg-doped InN

Miller

Ager

Smith

et al. 2010

Journal of Applied Physics

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“…As illustrated in Figure 4a, for low Mg-doped samples the near-surface Fermi-level is similar to what is measured in nearly intrinsic InN nanowires, i.e.,~0.4-0.5 eV above the valence band maximum; and for the sample with the highest Mg doping it is reduced to~0.1 eV above the valence band maximum. These results indicate that with Mg doping the near-surface region can be converted to p-type, which is in clear contrast to the previously reported Mg-doped InN epilayers, wherein the surface electron accumulation and Fermi-level pinning in the conduction band are commonly observed [19,21,24,25].…”

Section: Mg-dopant Incorporationcontrasting

confidence: 54%

Recent Advances on p-Type III-Nitride Nanowires by Molecular Beam Epitaxy

Zhao

2017

Crystals

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p-Type doping represents a key step towards III-nitride (InN, GaN, AlN) optoelectronic devices. In the past, tremendous efforts have been devoted to obtaining high quality p-type III-nitrides, and extraordinary progress has been made in both materials and device aspects. In this article, we intend to discuss a small portion of these processes, focusing on the molecular beam epitaxy (MBE)-grown p-type InN and AlN-two bottleneck material systems that limit the development of III-nitride near-infrared and deep ultraviolet (UV) optoelectronic devices. We will show that by using MBE-grown nanowire structures, the long-lasting p-type doping challenges of InN and AlN can be largely addressed. New aspects of MBE growth of III-nitride nanostructures are also discussed.

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Recent advances and challenges for successful p‐type control of InN films with Mg acceptor doping by molecular beam epitaxy

Yoshikawa

Wang

Ishitani

et al. 2010

Physica Status Solidi (a)

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InN is still the least studied material among III‐nitrides and there are several problems to be overcome for better understanding of its material properties and also its material control for device application. In particular, successful p‐type doping is a quite important issue but quite difficult in InN. In this article, we present a study on the latest advances in material control paying special attention to the p‐type doping of InN films using Mg‐acceptors by MBE, the demonstration of successful p‐type control and p‐type conduction, and their electrical and optical properties as well. Furthermore, as a prerequisite of successful p‐type doping of InN, epitaxy behaviors of InN on GaN and effects of threading dislocations on high‐purity undoped InN epilayers grown on GaN template are also discussed.

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Buried p-type layers in Mg-doped InN

Cited by 99 publications

References 18 publications

Hole transport and photoluminescence in Mg-doped InN

Hole transport and photoluminescence in Mg-doped InN

Recent Advances on p-Type III-Nitride Nanowires by Molecular Beam Epitaxy

Recent advances and challenges for successful p‐type control of InN films with Mg acceptor doping by molecular beam epitaxy

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