Bulk Growth of Mercury Cadmium Telluride (MCT)

Capper, P.

doi:10.1002/9780470669464.ch1

Cited by 26 publications

(30 citation statements)

References 35 publications

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“…If we consider the small values of gradients of rU n , rU p and rT and expand relations (3) and (4) into Taylor series one obtains these same expressions as those obtained by (Marshak and van Vliet 1984). The physical parameters of HgCdTe can be found at (Capper and Garland 2011).…”

Section: Introductionmentioning

confidence: 72%

The numerical method for solving the transport equations in HgCdTe heterostructures using the non-equilibrium distribution functions

2017

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This paper presents a numerical method for solving the set of transport equations in semiconductor heterostructures by using the non-equilibrium distribution function for electrons and holes. This method enables the calculation of carrier concentration, carrier mobility and entropy by integrations in the space of wave vectors. In the same way the electrical current density and density of entropy currents are determined. The influence of quasi-Fermi energy gradients for electrons and holes and the gradient of temperature on the physical parameters of the heterostructure is taken into account.

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Section: Introductionmentioning

confidence: 72%

The numerical method for solving the transport equations in HgCdTe heterostructures using the non-equilibrium distribution functions

2017

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“…216). Before HgTe was found to be a topologically non-trivial compound, it had been widely studied experimentally and theoretically [50][51][52]. Unlike other zinc-blende compounds, HgTe is a semiconductor with symmetry-protected zero-energy band gap.…”

Section: S-p Typementioning

confidence: 99%

Topological insulators from the perspective of first‐principles calculations

Zhang

2012

Physica Rapid Research Ltrs

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Abstractmagnified imageTopological insulators are new quantum states with helical gapless edge or surface states inside the bulk band gap. These topological surface states are robust against weak time‐reversal invariant perturbations without closing the bulk band gap, such as lattice distortions and non‐magnetic impurities. Recently a variety of topological insulators have been predicted by theories, and observed by experiments. First‐principles calculations have been widely used to predict topological insulators with great success. In this review, we summarize the current progress in this field from the perspective of first‐principles calculations. First of all, the basic concepts of topological insulators and the frequently‐used techniques within first‐principles calculations are briefly introduced. Secondly, we summarize general methodologies to search for new topological insulators. In the last part, based on the band inversion picture first introduced in the context of HgTe, we classify topological insulators into three types with s–p, p–p and d–f, and discuss some representative examples for each type.magnified imageSurface states of topological insulator Bi2Se3 consist of a single Dirac cone, as obtained from first‐principles calculations.(© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…In the case of a hydrogen-like acceptor impurity must be taken into account the light holes and heavy holes (Capper and Garland 2011;Chen and Tregilgas 1987). This results in:…”

Section: Introductionmentioning

confidence: 99%

“…Despite the fact that there exists extensive literature in this field (Landsberg 1991) the nature of these transitions is not yet fully understood. The ionization energy of donor levels in narrow-gap MCT is below 1 meV (Capper and Garland 2011). Due to the fact that the ground donor level is degenerated β 1 -fold, the donor band being created should contain β 1 N D energy levels.…”

Section: Introductionmentioning

confidence: 99%

The method for calculation of carrier concentration in narrow-gap n-type doped Hg1−xCdxTe structures

et al. 2017

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A simple method for the computation of carrier concentration in n-type doped Hg 1−x Cd x Te (MCT) structures is proposed. The method is based on the postulate of the existence of donor bands. In our model the donor bands are postulated to have a Gaussian distribution of density of states characterized by two parameters only (mean energy for this distribution and standard deviation). These parameters could be obtained with experimental data, which were comprised of a wide range of doping levels for various kinds of dopants.

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Bulk Growth of Mercury Cadmium Telluride (MCT)

Cited by 26 publications

References 35 publications

The numerical method for solving the transport equations in HgCdTe heterostructures using the non-equilibrium distribution functions

The numerical method for solving the transport equations in HgCdTe heterostructures using the non-equilibrium distribution functions

Topological insulators from the perspective of first‐principles calculations

The method for calculation of carrier concentration in narrow-gap n-type doped Hg1−xCdxTe structures

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