The numerical method for solving the transport equations in HgCdTe heterostructures using the non-equilibrium distribution functions

Jóźwikowski, K.; Jóźwikowska, A.; Nietopiel, M.

doi:10.1007/s11082-017-0923-9

Cited by 2 publications

(1 citation statement)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The rate of recombination is more strongly dependent on the concentration of carriers than the generation rate. [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] Similar conclusions can be made by analyzing Figs. 8 and 9 for structures A and C working at 300 K.…”

Section: Results Of Calculationssupporting

confidence: 62%

Enhanced Numerical Modeling of HgCdTe Long Wavelength Infrared Radiation High Operating Temperature Non-equilibrium P+ν(π)N+ Photodiodes

Jóźwikowski

Jóźwikowska

2019

Journal of Elec Materi

Self Cite

View full text Add to dashboard Cite

Using our computer programs, numerical simulations of photoelectric and fluctuating phenomena were carried out in diode structures of the CdHgTe mesa in the P + m(p)N + configuration operating at 230 K and 300 K. These phenomena were analyzed in structures where additional energy barriers at the absorber boundary were applied. Exclusion and extraction of charge carriers in the absorber area after biasing the structures with reverse voltage reduces their concentration by more than an order of magnitude. Reduction of carrier concentration has a positive effect on the increase of the absorption coefficient due to reduction of the Burstein-Moss effect, increases the resistance and electro-optical gain, and effectively suppresses generation and thermal recombination. It is possible to obtain 70% of quantum efficiency in biased photodiodes. It was shown that a non-equilibrium long-wave photodiode working at room temperature can have a normalized detectivity of over 10 9 cmHZ 1/2 W À1 for radiation with 10.6 lm wavelength. The results of our calculations and their analysis are illustrated by numerous figures.

show abstract

Section: Results Of Calculationssupporting

confidence: 62%

Enhanced Numerical Modeling of HgCdTe Long Wavelength Infrared Radiation High Operating Temperature Non-equilibrium P+ν(π)N+ Photodiodes

Jóźwikowski

Jóźwikowska

2019

Journal of Elec Materi

Self Cite

View full text Add to dashboard Cite

show abstract

Numerical estimation of photon reabsorption process and optical crosstalk in arrays of HgCdTe photodiodes

Jóźwikowska

Jóźwikowski

2019

Opt Quant Electron

View full text Add to dashboard Cite

The effect of photon reabsorption (recycling) on photoelectric parameters of non-equilibrium P + nN + photodiodes, for example the pixels of the detector array, was analyzed. We solved the system of transport equations additionally extended by two balances equations for photons. It was shown that the density of photons in photodiodes is strongly dependent on the concentration of charge carriers. This phenomenon results in a drastic reduction in the rate of radiative recombination and generation in analyzed photodiodes. Additionally, the phenomenon of optical crosstalk between the nearest pixels in the matrix was examined. The increase in the dark current caused by this phenomenon was estimated. It depends on the size of the pixel, the distance between pixels, and the value of bias voltage. The increase in the current is around 0.5% for a pixel with surface 10 × 10 µm 2 , and around 1% for one with 5 × 5 µm 2 , both reverse biased with 0.2 V. Keywords Non-equilibrium mode of operation • HgCdTe photodiodes • Reabsorption effect • Optical crosstalk This article is part of the TopicalCollection on Numerical Simulation of Optoelectronic Devices,NUSOD' 18.

show abstract

The numerical method for solving the transport equations in HgCdTe heterostructures using the non-equilibrium distribution functions

Cited by 2 publications

References 18 publications

Enhanced Numerical Modeling of HgCdTe Long Wavelength Infrared Radiation High Operating Temperature Non-equilibrium P+ν(π)N+ Photodiodes

Enhanced Numerical Modeling of HgCdTe Long Wavelength Infrared Radiation High Operating Temperature Non-equilibrium P+ν(π)N+ Photodiodes

Numerical estimation of photon reabsorption process and optical crosstalk in arrays of HgCdTe photodiodes

Contact Info

Product

Resources

About