The method for calculation of carrier concentration in narrow-gap n-type doped Hg1−xCdxTe structures

Abstract

A simple method for the computation of carrier concentration in n-type doped Hg 1−x Cd x Te (MCT) structures is proposed. The method is based on the postulate of the existence of donor bands. In our model the donor bands are postulated to have a Gaussian distribution of density of states characterized by two parameters only (mean energy for this distribution and standard deviation). These parameters could be obtained with experimental data, which were comprised of a wide range of doping levels for various kinds of dopants.