Buffer Layer Engineering of Indium Oxide Based Trench TFT for Ultra High Current Driving

Im, Youngjun; Cho, Seong-In; Kim, Jingyu; Woo, Namgyu; Ko, Jong Beom; Park, Sang-Hee Ko

doi:10.1109/led.2023.3312360

Cited by 3 publications

(1 citation statement)

References 13 publications

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“…Without breaking vacuum, a 10 nm thick Al 2 O 3 protective layer (PL) against channel contamination from chemical exposure was deposited by PEALD at 200 °C. [9,10] The PL was patterned in conjunction with the active layer. For the passivation layer, 35 nm thick Al 2 O 3 was deposited by the same methods with the PL.…”

Section: Methodsmentioning

confidence: 99%

Upside–Down Annealing of Oxide Thin‐Film Transistors and its Analysis Using Hydrogen‐Diffusion Model

Park,

Kim,

Park

2024

Physica Status Solidi (a)

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Hydrogen plays a crucial role in controlling the electrical characteristics of oxide thin‐film transistors (TFTs). The conductivity of the semiconductor can be modulated by controlling the amount of hydrogen in the active layer. In this study, a thermal annealing of the sample in an inverted orientation (referred to as “upside‐down annealing”) is introduced. The impact of this approach on the hydrogen content within the In2O3 active layer is examined through the lens of a hydrogen diffusion model. By time‐of‐flight secondary ion mass spectrometry analysis, a hydrogen diffusion model for the TFT is established, and it is demonstrated that upside–down annealing is an effective method for preventing hydrogen depletion caused by out‐diffusion. A bottom‐gate bottom‐contact TFT is fabricated to analyze electrical characteristics. By employing different post‐thermal annealing methods on the device, it is discovered that the upside–down annealing enhances the device's performance significantly up to mobility of 22.3 cm2 V−1 s−1, which surpasses more than twice the mobility achieved with the traditionally oriented, “straight” annealed TFT.

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Section: Methodsmentioning

confidence: 99%

Upside–Down Annealing of Oxide Thin‐Film Transistors and its Analysis Using Hydrogen‐Diffusion Model

Park,

Kim,

Park

2024

Physica Status Solidi (a)

Self Cite

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P‐1.15: Improving the Performance of IZO Transistor by Adding Buffer Layer

Xiong,

Shi,

xie

et al. 2024

Symp Digest of Tech Papers

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In this work, we studied the effect of the different thickness buffer layer on the electrical characteristics of InZnO (IZO) transistors. We found that when a 20nm layer of indium‐aluminum‐zinc oxide (IAZO) was added as the buffer layer between S/D electrodes and the active layer, the IZO transistor exhibited optimum electrical performance, with a high on/off drain current ratio of 2.61 ×107, the field‐effect mobility (μFE) of 15.75 cm2/Vs, the subthreshold swing (SS) of 129.85 mV/decade, and the turn‐on voltage (VON) of ‐0.4 V.

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Atomic-Layer-Deposited Ultrathin InAlZnO FETs-Based 2T0C DRAM Cells With Long Data Retention and Multilevel Storage

Xiong,

Luo,

Meng

et al. 2024

IEEE Trans. Electron Devices

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Buffer Layer Engineering of Indium Oxide Based Trench TFT for Ultra High Current Driving

Cited by 3 publications

References 13 publications

Upside–Down Annealing of Oxide Thin‐Film Transistors and its Analysis Using Hydrogen‐Diffusion Model

Upside–Down Annealing of Oxide Thin‐Film Transistors and its Analysis Using Hydrogen‐Diffusion Model

P‐1.15: Improving the Performance of IZO Transistor by Adding Buffer Layer

Atomic-Layer-Deposited Ultrathin InAlZnO FETs-Based 2T0C DRAM Cells With Long Data Retention and Multilevel Storage

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