P‐1.15: Improving the Performance of IZO Transistor by Adding Buffer Layer

Abstract

In this work, we studied the effect of the different thickness buffer layer on the electrical characteristics of InZnO (IZO) transistors. We found that when a 20nm layer of indium‐aluminum‐zinc oxide (IAZO) was added as the buffer layer between S/D electrodes and the active layer, the IZO transistor exhibited optimum electrical performance, with a high on/off drain current ratio of 2.61 ×107, the field‐effect mobility (μFE) of 15.75 cm2/Vs, the subthreshold swing (SS) of 129.85 mV/decade, and the turn‐on voltage (VON) of ‐0.4 V.