Atomic-Layer-Deposited Ultrathin InAlZnO FETs-Based 2T0C DRAM Cells With Long Data Retention and Multilevel Storage

Xiong, Wen; Luo, Binbin; Meng, Wei; Wu, Xiaohan; Zhu, Bao; Ding, Shi-Jin

doi:10.1109/ted.2024.3365457

IEEE Trans. Electron Devices

2024

DOI: 10.1109/ted.2024.3365457

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Atomic-Layer-Deposited Ultrathin InAlZnO FETs-Based 2T0C DRAM Cells With Long Data Retention and Multilevel Storage

Wen Xiong,

Binbin Luo,

Wei Meng

et al.

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2024

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Cited by 2 publications

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Plasma-enhanced atomic layer deposition of Sn-doped indium oxide semiconductor nano-films for thin-film transistors

Luo,

Zhang,

Meng

et al. 2024

Nanotechnology

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Sn-doped indium oxide (ITO) semiconductor nano-films are fabricated by plasma-enhanced atomic layer deposition (PEALD) using trimethylindium (TMIn), tetrakis(dimethylamino)tin (TDMASn), and O2 plasma as the sources of In, Sn and O, respectively. A shared temperature window of 150  200 °C is observed for the deposition of ITO nano-films. The introduction of Sn into indium oxide is found to increase the concentration of oxygen into the ITO films and inhibit crystallization. Furthermore, two oxidation states are observed for In and Sn, respectively. With the increment of interfaces of In-O/Sn-O in the ITO films, the relative percentage of In3+ ions increases and that of Sn4+ decreases, which is generated by interfacial competing reactions. By optimizing the channel component, the In0.77Sn0.23O1.11 thin-film transistors (TFTs) demonstrate high performance, including μFE of 52.7 cm2/Vs, and a high ION/IOFF of 5×109. Moreover, the devices show excellent positive bias temperature stress stability at 3 MV/cm and 85 °C, i.e., a minimal Vth shift of 0.017 V after 4 ks stress. This work highlights the successful application of Sn-doped indium oxide semiconductor nano-films by ALD for TFTs.

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Plasma-enhanced atomic layer deposition of Sn-doped indium oxide semiconductor nano-films for thin-film transistors

Luo,

Zhang,

Meng

et al. 2024

Nanotechnology

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First Experimental Demonstration of 3D-Stacked 2T0C DRAM Cells Based on Indium Tin Oxide Channel

Gu,

Hu,

Zhu

et al. 2024

IEEE Electron Device Lett.

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Atomic-Layer-Deposited Ultrathin InAlZnO FETs-Based 2T0C DRAM Cells With Long Data Retention and Multilevel Storage

Cited by 2 publications

References 31 publications

Plasma-enhanced atomic layer deposition of Sn-doped indium oxide semiconductor nano-films for thin-film transistors

Plasma-enhanced atomic layer deposition of Sn-doped indium oxide semiconductor nano-films for thin-film transistors

First Experimental Demonstration of 3D-Stacked 2T0C DRAM Cells Based on Indium Tin Oxide Channel

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