Plasma-enhanced atomic layer deposition of Sn-doped indium oxide semiconductor nano-films for thin-film transistors
Binbin Luo,
Conglin Zhang,
Wei Meng
et al.
Abstract:Sn-doped indium oxide (ITO) semiconductor nano-films are fabricated by plasma-enhanced atomic layer deposition (PEALD) using trimethylindium (TMIn), tetrakis(dimethylamino)tin (TDMASn), and O2 plasma as the sources of In, Sn and O, respectively. A shared temperature window of 150 200 °C is observed for the deposition of ITO nano-films. The introduction of Sn into indium oxide is found to increase the concentration of oxygen into the ITO films and inhibit crystallization. Furthermore, two oxidation states are… Show more
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