Buffer-Free GeSn and SiGeSn Growth on Si Substrate Using In Situ SnD4 Gas Mixing

Mosleh, Aboozar; Alher, Murtadha; Cousar, Larry; Du, Wei; Ghetmiri, Seyed Amir; Al-Kabi, Sattar; Dou, Wei; Grant, Perry C.; Sun, Greg; Soref, Richard A.; Li, Baohua; Naseem, Hameed A.; Yu, Shui-Qing

doi:10.1007/s11664-016-4402-z

Cited by 17 publications

(11 citation statements)

References 27 publications

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“…To the best of our knowledge, there has yet to be a review article that systematically reported on GeSn material growth and counterpart optoelectronic devices using the CVD technique. UHVCVD [ 101 , 102 , 103 , 104 ], RPCVD [ 105 , 106 , 107 , 108 , 109 , 110 ], PECVD [ 111 , 112 , 113 ], LPCVD [ 114 , 115 , 116 , 117 ], and APCVD [ 118 , 119 ] are discussed in this review, with a focus on identifying processes that can be transferred for the commercial production of GeSn. The objective of this comprehensive review article is to provide readers with a full understanding of the recent experimental advancements in GeSn material growth using CVD, as well as their optoelectronic applications.…”

Section: Introductionmentioning

confidence: 99%

Review of Si-Based GeSn CVD Growth and Optoelectronic Applications

et al. 2021

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GeSn alloys have already attracted extensive attention due to their excellent properties and wide-ranging electronic and optoelectronic applications. Both theoretical and experimental results have shown that direct bandgap GeSn alloys are preferable for Si-based, high-efficiency light source applications. For the abovementioned purposes, molecular beam epitaxy (MBE), physical vapour deposition (PVD), and chemical vapor deposition (CVD) technologies have been extensively explored to grow high-quality GeSn alloys. However, CVD is the dominant growth method in the industry, and it is therefore more easily transferred. This review is focused on the recent progress in GeSn CVD growth (including ion implantation, in situ doping technology, and ohmic contacts), GeSn detectors, GeSn lasers, and GeSn transistors. These review results will provide huge advancements for the research and development of high-performance electronic and optoelectronic devices.

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Section: Introductionmentioning

confidence: 99%

Review of Si-Based GeSn CVD Growth and Optoelectronic Applications

et al. 2021

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“…Interestingly, the optical properties of GeSn samples, with a composition near the transition point, are very sensitive to changes in composition or strain. On the experimentally side, despite the low-equilibrium solid solubility of Sn in Ge of only 1% [11], growth under compressive strain of high Sn concentrations has been achieved, demonstrating the indirect-to-direct transition [12][13][14] and fabrication of direct bandgap GeSn devices with high optical emission efficiency [15][16][17][18]. However, how much Sn can be achieved in GeSn and how stable GeSn with high Sn content can be at operating temperatures above room temperature, must be investigated.…”

Section: Introductionmentioning

confidence: 99%

Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys

et al. 2021

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We report on the connection between strain, composition, defect density and the photoluminescence observed before and after annealing at 300 °C for GeSn samples with Sn content of 8% to 10%. Results show how the composition and level of strain influenced the separation between the indirect and direct optical transitions, while changes in the level of strain also influenced the density of misfit dislocations and surface roughness. The effect of annealing is observed to lower the level of strain, decreasing the energy separation between the indirect and direct optical transitions, while also simultaneously increasing the density of misfit/threading dislocations and surface roughness. The reduction in energy separation leads to an increase of photoluminescence (PL) emission, while the increase of misfit/threading dislocations density and surface roughness results in a decrease of PL. Consequently, the competition between these factors is observed to determine the impact of annealing on the PL. As a result, annealing increases the collected PL for small (≤40 meV) separation between the indirect to direct optical transitions in the as-grown sample while decreases the PL for larger (≥60 meV) separations. More generally, these numbers have a small dependence on the level of strain in the as-grown samples.

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“…Growth of GeSn on Ge is difficult due to low solubility (<1%) of Sn in Ge and the instability of α-Sn above 13 °C. In order to grow GeSn material, growth techniques were developed under non-equilibrium growth conditions such as low temperature growth via either MBE [10][11][12][13][14][15][16] , or CVD [17][18][19][20][21][22][23][24] . The CVD growth of GeSn has been investigated over a decade.…”

Section: Introductionmentioning

confidence: 99%

UHV-CVD growth of high quality GeSn using SnCl₄: from material growth development to prototype devices

Grant¹,

Dou

Alharthi

et al. 2019

Opt. Mater. Express

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The persistent interest of the epitaxy of group IV alloy GeSn is mainly driven by the demand of efficient light source that could be monolithically integrated on Si for mid-infrared Si photonics. For chemical vapor deposition of GeSn, the exploration of parameter window is difficult from the beginning due to its non-equilibrium growth condition. In this work, we demonstrated the effective pathway to achieve the high quality GeSn with high Sn incorporation. The GeSn films were grown on Ge-buffered Si via ultra-high vacuum chemical vapor deposition using GeH4 and SnCl4 as precursor gasses. The influence of both SnCl4 flow fraction and growth temperature on the Sn incorporation and material quality were investigated. The key to achieve effective Sn incorporation and high material quality is to explore the proper parameter match between SnCl4 supply and growth temperature, which is also called optimized growth regime. The Sn precipitation is significantly suppressed in optimized growth regime, leading to more Sn incorporation into Ge and enhanced material quality. The prototype GeSn photoconductors were fabricated with typical samples, showing the promising devices applications towards mid-infrared optoelectronics.

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Buffer-Free GeSn and SiGeSn Growth on Si Substrate Using In Situ SnD4 Gas Mixing

Cited by 17 publications

References 27 publications

Review of Si-Based GeSn CVD Growth and Optoelectronic Applications

Review of Si-Based GeSn CVD Growth and Optoelectronic Applications

Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys

UHV-CVD growth of high quality GeSn using SnCl₄: from material growth development to prototype devices

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Buffer-Free GeSn and SiGeSn Growth on Si Substrate Using In Situ SnD4 Gas Mixing

Cited by 17 publications

References 27 publications

Review of Si-Based GeSn CVD Growth and Optoelectronic Applications

Review of Si-Based GeSn CVD Growth and Optoelectronic Applications

Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys

UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices

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Product

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UHV-CVD growth of high quality GeSn using SnCl₄: from material growth development to prototype devices