BSIM-CG: A compact model of cylindrical/surround gate MOSFET for circuit simulations

Venugopalan, Sriramkumar; Lu, Darsen D.; Kawakami, Yukiya; Lee, Peter M.; Niknejad, Ali M.; Hu, Chenming

doi:10.1016/j.sse.2011.09.001

Cited by 27 publications

(11 citation statements)

References 16 publications

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“…FinFETs have been a very useful tool for designers. Berkeley short-channel IGFET model (BSIM) and University of Florida double-gate model (UFDG) for SOI multigate MOS-FETs and FinFETs were built using TCAD and calibrated using fabricated hardware [102][103][104][105]. These models are compatible with commercial circuit simulators, such as simulation program with integrated circuit emphasis (SPICE).…”

Section: Compact Models Physics Based Compact Models Ofmentioning

confidence: 99%

FinFETs: From Devices to Architectures

Bhattacharya

Jha

2014

Advances in Electronics

156

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Since Moore’s law driven scaling of planar MOSFETs faces formidable challenges in the nanometer regime, FinFETs and Trigate FETs have emerged as their successors. Owing to the presence of multiple (two/three) gates, FinFETs/Trigate FETs are able to tackle short-channel effects (SCEs) better than conventional planar MOSFETs at deeply scaled technology nodes and thus enable continued transistor scaling. In this paper, we review research on FinFETs from the bottommost device level to the topmost architecture level. We survey different types of FinFETs, various possible FinFET asymmetries and their impact, and novel logic-level and architecture-level tradeoffs offered by FinFETs. We also review analysis and optimization tools that are available for characterizing FinFET devices, circuits, and architectures.

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Section: Compact Models Physics Based Compact Models Ofmentioning

confidence: 99%

FinFETs: From Devices to Architectures

Bhattacharya

Jha

2014

Advances in Electronics

156

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“…The model presented here differs from previous studies in the literature in three main aspects: (1) It uses Fermi-Dirac statistics instead of simplified Boltzmann-Maxwell ones [5][6][7][8] to describe the electron state occupation in III-V semiconductors properly without making any approximation for the Fermi-Dirac integral. 9 (2) It accounts for the electron quantum nature (observed in small NWs 10,11 ) avoiding classical depictions [12][13][14][15] of the charge. For this, we extend the results of a Q-V model presented in a previous work 16 (by successfully solving the Schr€ odinger and Poisson equations for an arbitrary number of subbands).…”

Section: Introductionmentioning

confidence: 99%

Analytic drain current model for III–V cylindrical nanowire transistors

Marín

Ruiz

Schmidt

et al. 2015

Journal of Applied Physics

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Articles you may be interested inChannel doping-dependent analytical model for symmetric double gate metal-oxide-semiconductor field-effect transistor. II. Continuous drain current model from subthreshold to inversion region J. Appl. Phys. 113, 214507 (2013); 10.1063/1.4808453 Kubo-Greenwood approach for the calculation of mobility in gate-all-around nanowire metal-oxide-semiconductor field-effect transistors including screened remote Coulomb scattering-Comparison with experiment Wave function penetration effects in double gate metal-oxide-semiconductor field-effect-transistors: impact on ballistic drain current with device scaling J. Appl. Phys. 105, 064505 (2009); 10.1063/1.3079518 Simulation of hole phonon-velocity in strained Si/SiGe metal-oxide-semiconductor transistor J. Appl. Phys. 95, 713 (2004); 10.1063/1.1633346 Wave function penetration effects on current-voltage characteristics of ballistic metal-oxide-semiconductor transistorsAn analytical model is proposed to determine the drain current of III-V cylindrical nanowires (NWs). The model uses the gradual channel approximation and takes into account the complete analytical solution of the Poisson and Schr€ odinger equations for the C-valley and for an arbitrary number of subbands. Fermi-Dirac statistics are considered to describe the 1D electron gas in the NWs, being the resulting recursive Fermi-Dirac integral of order À1/2 successfully integrated under reasonable assumptions. The model has been validated against numerical simulations showing excellent agreement for different semiconductor materials, diameters up to 40 nm, gate overdrive biases up to 0.7 V, and densities of interface states up to 10 13 eV À1 cm À2 . V C 2015 AIP Publishing LLC. [http://dx.

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“…Nevertheless, an analytic solution is available Manuscript [15]. For instance, a weak-inversion approximation was made in [7] and [8], resulting in a low model accuracy in other regions of device operation.…”

Section: Introductionmentioning

confidence: 99%

“…The main approximation is based on treating a doping-related spatial function as a constant parameter. In particular, this approach does not assume any device operating region and there is no need to solve the surface potential, both of which are required by many other GAA and multigate MOSFET models [8], [23]. Therefore, this surface-field-based compact model allows more efficient and accurate prediction of nanowire MOEFET behavior in all regions of device operation.…”

Section: Introductionmentioning

confidence: 99%

A Surface-Field-Based Model for Nanowire MOSFETs With Spatial Variations of Doping Profiles

Cheng

Hong

Kuo

et al. 2014

IEEE Trans. Electron Devices

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We report a novel method to solve the nonlinear 1-D Poisson's equation for the gate-all-around (GAA) nanowire MOSFETs with nonuniform doping profiles. An algebraic relation between the electric field and potential is identified to develop a surface-field-based compact model. Drain current is derived from the oxide-interface boundary condition to avoid the complicated surface-potential approach. As verified by the TCAD simulations, this analytic model is capable of continuously covering all operating regions of GAA nanowire MOSFETs with slowly varying doping profiles.Index Terms-Gate-all-around (GAA) nanowire MOSFET, Poisson's equation, spatial variations, surface-field-based model.

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BSIM-CG: A compact model of cylindrical/surround gate MOSFET for circuit simulations

Cited by 27 publications

References 16 publications

FinFETs: From Devices to Architectures

FinFETs: From Devices to Architectures

Analytic drain current model for III–V cylindrical nanowire transistors

A Surface-Field-Based Model for Nanowire MOSFETs With Spatial Variations of Doping Profiles

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