Analytic drain current model for III–V cylindrical nanowire transistors

Abstract

Articles you may be interested inChannel doping-dependent analytical model for symmetric double gate metal-oxide-semiconductor field-effect transistor. II. Continuous drain current model from subthreshold to inversion region J. Appl. Phys. 113, 214507 (2013); 10.1063/1.4808453 Kubo-Greenwood approach for the calculation of mobility in gate-all-around nanowire metal-oxide-semiconductor field-effect transistors including screened remote Coulomb scattering-Comparison with experiment Wave function penetration effects in double gate metal-oxide-semiconductor field-effect-transistors: impact on ballistic drain current with device scaling J. Appl. Phys. 105, 064505 (2009); 10.1063/1.3079518 Simulation of hole phonon-velocity in strained Si/SiGe metal-oxide-semiconductor transistor J. Appl. Phys. 95, 713 (2004); 10.1063/1.1633346 Wave function penetration effects on current-voltage characteristics of ballistic metal-oxide-semiconductor transistorsAn analytical model is proposed to determine the drain current of III-V cylindrical nanowires (NWs). The model uses the gradual channel approximation and takes into account the complete analytical solution of the Poisson and Schr€ odinger equations for the C-valley and for an arbitrary number of subbands. Fermi-Dirac statistics are considered to describe the 1D electron gas in the NWs, being the resulting recursive Fermi-Dirac integral of order À1/2 successfully integrated under reasonable assumptions. The model has been validated against numerical simulations showing excellent agreement for different semiconductor materials, diameters up to 40 nm, gate overdrive biases up to 0.7 V, and densities of interface states up to 10 13 eV À1 cm À2 . V C 2015 AIP Publishing LLC. [http://dx.

In1 − xGaxAs Double Metal Gate-Stacking Cylindrical Nanowire MOSFET for Highly Sensitive Photo Detector

“…The extraction of data has been performed by graph digitizer and plotted with simulated results. The result shows that the better agreement with reference [29]. The calibration curve of DMG CL-NWMOSFET with reported data are shown in Figure 2.…”

“…The simulation results of the In0.53Ga0.47As DMG CL-NWMOSFET are validated using Silvaco TCAD simulator with the reported research paper [29] for different parameters such as channel/gate length (L), oxide thickness (tox), gate work function (Φ), radius of Nanowire (R), channel doping (NA) and source/drain doping (ND + ) are taken as 1 μm, 1.5 nm, 5.05 eV, 7.5 nm, 1e 14 cm -3 and 5e 17 cm -3 respectively at Vgs-Vt=0.5, where as Vgs respresents the gate-source voltage and Vt represents the threshold voltage. The extraction of data has been performed by graph digitizer and plotted with simulated results.…”

Universal core model for multiple-gate field-effect transistors with short channel and quantum mechanical effects

“…A variety of analytical and compact models of MG FETs have been proposed for applications in circuit design and simulation [8][9][10][11][12][13][14][15][16][17]. Most of these models, called 'core model', are derived by solving Poisson's equation using the gradualchannel approximation (GCA), which assumes that the channel length (L) is sufficiently large to ignore other physical effects such as SCEs and quantum mechanical effects (QMEs) [18].…”

Ultrathin Junctionless Nanowire FET Model, Including 2-D Quantum Confinements

“…As in [9], relying on the drift-diffusion transportation model, we propose to calculate the drain current, given by:…”