Bromine functionalized molecular adlayers on hydrogen passivated silicon surfaces

Basu, Rajiv; Kinser, C. Reagan; Tovar, John D.; Hersam, Mark C.

doi:10.1016/j.chemphys.2005.12.023

Cited by 30 publications

(37 citation statements)

References 36 publications

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“…3b, attributed to different carbon-bound Br compounds. This is also consistent with previous studies, where they reported similar Br3d binding energy peaks for Darco Hg-LH and non-halogenated AC and brominated carbon nanotubes [6,[32][33][34][35]. Papirer et al [33] studied brominated carbon black compounds with XPS and determined different Br compounds on the carbon surface depending on the bromination method and subsequent heating.…”

Section: Resultssupporting

confidence: 87%

Mercury chemistry on brominated activated carbon

Sasmaz

Kirchofer

Jew

et al. 2012

Fuel

130

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Section: Resultssupporting

confidence: 87%

Mercury chemistry on brominated activated carbon

Sasmaz

Kirchofer

Jew

et al. 2012

Fuel

130

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“…For Br-PEDOT, the high resolution scan for bromine revealed a spin-split doublet Br 3d 3/2 and Br 3d 5/2 having a 0.9 eV energy splitting, 39 as shown in the inset in Figure 3b. Additionally, a high resolution scan for chlorine in the Br-PEDOT film confirmed the absence of chlorine.…”

Section: Resultsmentioning

confidence: 95%

Conformal, Conducting Poly(3,4-ethylenedioxythiophene) Thin Films Deposited Using Bromine as the Oxidant in a Completely Dry Oxidative Chemical Vapor Deposition Process

2010

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Poly(3,4-ethylenedioxythiophene) (PEDOT) thin films were obtained through oxidative chemical vapor deposition (oCVD) by using a new oxidant;bromine. The use of bromine eliminates any post processing rinsing step required with other oxidants like iron chloride and hence makes the process completely dry. Film properties are further compared with the PEDOT films deposited using iron chloride as the oxidant. Accelerated aging experiments show longer retention of electrical conductivity for the PEDOT films obtained using bromine as the oxidant. Conductivities as high as 380 S/cm were obtained for PEDOT films deposited using bromine as the oxidant at 80°C, which is significantly higher than that for PEDOT films deposited using iron chloride as the oxidant at the same temperature. Cross-sectional SEM of the PEDOT films deposited using bromine on silicon trench wafers demonstrates high conformal deposition of the films. All the results show the possibility of depositing highly conducting, conformal PEDOT films on any substrate including silicon, glass, paper, and plastic.

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“…It was observed that dimethylstyrene reacts with the dangling bond on the Si(100)-(2 × 1)-H surface similarly to styrene; however, other molecules such as allyl methyl sulfide, ethylene sulfide, 5-bromo-1-pentene, acrylic acid, and 4-vinylpyridine do not show any observable line growth [415]. The 4-bromostyrene does form aligned structures on H-terminated Si(100) and this reaction is highly selective in preserving bromine atoms available for further modification [411].…”

Section: Chemistry Of Partially Hydrogen-covered Silicon Surfacesmentioning

confidence: 88%

“…Dense and well-characterized monolayers of styrene derivatives, such as 4-bromostyrene, can also be grown on Si(111) in a similar manner [411,412]. The features shown in Fig.…”

Section: Chemistry Of Partially Hydrogen-covered Silicon Surfacesmentioning

confidence: 96%