Broadband near-infrared luminescence in γ-irradiated Bi-doped α-BaB_2O_4 single crystals

Abstract

Spectroscopic properties of as-grown and gamma-irradiated undoped and Bi-doped alpha-BBO (BaB(2)O(4)) single crystals were investigated. Bi(2+) and color centers in Bi:alpha-BBO crystals were investigated to be nonluminescent in the near-infrared (NIR) region. Broadband NIR luminescence at 1139 nm with a FWHM of 108 nm and a decay time of 526 mus was realized in Bi:alpha-BBO crystal through gamma irradiation. Bi(+) was attributed to be responsible for the NIR emission, which can be bleached by thermal annealing. The involved physical processes in Bi:alpha-BBO crystal during the courses of irradiation and heat annealing were tentatively established.

NIR photoluminescence of bismuth-doped CsCdBr3 – The first ternary bromide phase with a univalent bismuth impurity center

“…Univalent bismuth impurity, observed in several chloride [6][7][8][9][10], iodide [18,19] and nonhalide crystal phases [11,[20][21][22][23][24][25], represents the simplest form of NIR photoluminescent subvalent bismuth center. It possesses the 6p 2 open shell electronic configuration with the 3 P 0 ground state and 3 P 1 , 3 P 2 low lying excited states.…”

Discussion on the origin of NIR emission from Bi-doped materials

“…Since then, research on Bi-doped NIR-emitting glasses, crystals and optical devices has experienced rapid growth and is now conducted in laboratories on almost every continent. NIR emission from bismuthbased centers has successively been reported for silicate [1,2,[5][6][7][8][9][10][11][12][13][14][15][16], germanate [3,7,[17][18][19][20][21], aluminoborate [22], aluminophosphate [23,24], chalcogenide [25][26][27][28], germanosilicate [29,30], aluminosilicate [6,9,31] and borosilicate glasses [31,32] as well as for polycrystalline SrB 4 O 7 [8], single crystals of RbPb 2 Cl 5 [33], BaF 2 [34], α-BaB 2 O 4 [35] and various other materials. Also on the area of device fabrication, progress has been very rapid.…”

Growth and near-infrared luminescence properties of Yb–Bi co-doped PbWO4 crystal

“…But all the doped samples show a declined transmittance with an evident red-shift cutoff edge compared with the pure PWO crystal. Due to the low concentration of Bi ions, Bi doped crystals usually demonstrate feeble absorption bands in the 400-800 nm wavelength region [9][10][11], which might be too weak to be detected in this work. After the g-ray irradiation, the as-grown pure PWO presents the intrinsic absorption band around 350 nm.…”

“…Since 2009, several Bi doped crystals, such as BaF 2 [9], BaBO 4 [10], and CsI [11], were grown to investigate the luminescence properties and mechanism of the Bi ions in crystal matrix. Among them, Bi: a-BaBO 4 crystal presents NIR luminescence after the treatment of g-irradiation [10].…”