Broadband CMOS Stacked RF Power Amplifier Using Reconfigurable Interstage Network for Wideband Envelope Tracking

Park, Sung-Hwan; Woo, Jung Hoon; Kim, Unha; Kwon, Youngwoo

doi:10.1109/tmtt.2015.2409175

Cited by 31 publications

(5 citation statements)

References 19 publications

(17 reference statements)

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“…In comparison with [7] and [16], the designed PA shows better linearity performance and power efficiency. This PA shows better linearity than [17,18] but lower PAE min while in comparison with [19] and [20], it exhibits better PAE min and linearity performances over higher fractional bandwidth percentage. This work in comparison with [21] which used Class-AB shows better PAE min but slightly lower linearity.…”

Section: Discussionmentioning

confidence: 84%

Design of Broadband, High-Efficiency, and High-Linearity Gan Hemt Class-J Rf Power Amplifier

Mohadeskasaei¹,

Lin²,

Zhou³

et al. 2017

PIER C

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In this paper, the design of a broadband, high-efficiency, and high-linearity Class-J GaN HEMT RF power amplifier (PA) over 1.6-2.6 GHz is explained. The source impedance is conjugatematched to the input impedance of the device resulted from small signal simulation to make a high-gain power amplifier. The load impedance related to the maximum power added efficiency (PAE) and maximum output power is obtained by pulling the only fundamental and second harmonic components over frequency bandwidth. Thus, not only a high-efficiency PA but also a high-linearity PA is formed. The input and output matching networks are implemented by microstrip transmission lines. The theoretical PA designed is optimized using computer-aided simulations. The fabricated PA provides output power in the range of 38-39.9 dBm with 60%-73% PAE and 15-16.3 dB power gain across the band. The worst measured ACLR1 as the PA is fed by the CDMA signal with 1.2288 MHz bandwidth is at a level of −38.6 dBc. A close agreement between the measured and simulation results is observed due to the use of high-order harmonic balance simulator and high-accuracy implementation procedure.

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Section: Discussionmentioning

confidence: 84%

Design of Broadband, High-Efficiency, and High-Linearity Gan Hemt Class-J Rf Power Amplifier

Mohadeskasaei¹,

Lin²,

Zhou³

et al. 2017

PIER C

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“…Both stages’ exhibited capacitive and inductive responses provide the required opposite-phase characteristics. The interstage impedance between the DAWPD and main PA is vital since it reflects the characteristic of the pre-distorted signal, which is fed into the main PA’s input in which it impacts the linearity of the PA across the wide operating bandwidth [ 24 , 25 ]. Hence, the interstage impedance is beneficial in attaining a wideband linearization.…”

Section: Operation Principlementioning

confidence: 99%

A Wide-Bandwidth PVT-Reconfigurable CMOS Power Amplifier with an Integrated Tunable-Output Impedance Matching Network

et al. 2023

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This paper proposes a wideband CMOS power amplifier (PA) with integrated digitally assisted wideband pre-distorter (DAWPD) and a transformer-integrated tunable-output impedance matching network. As a continuation of our previous research, which focused only on linearization tuning for wideband and PVT, this work emphasized improving the maximum output power, gain and PAE across the PVT variations while maintaining the linearity for a wide frequency bandwidth of 1 GHz. The DAWPD is employed at the driver stage to realize a pre-distorting characteristic for wideband linearization. The addition of the tunable-output impedance matching technique in this work provides stable output power, PAE and gain across the PVT variations, through which it improves the design’s robustness, reliability and production yield. Fabricated in CMOS 130 nm with an 8-metal-layer process, the DAWPD-PA with tunable-output impedance matching can achieve an operating frequency bandwidth of 1 GHz from 1.7 to 2.7 GHz. The DAWPD-PA attained a maximum output power of 27 to 28 dBm with a peak PAE of 38.8 to 41.3%. The power gain achieved was 26.9 to 29.7 dB across the targeted frequencies. In addition, when measured with a 20 MHz LTE modulated signal, the DAWPD-PA achieved a linear output power and PAE of 24.0 to 25.1 dBm and 34.5 to 38.8% across the frequency, respectively. On top of that, in this study, the DAWPD-PA is proven to be resilient to process-voltage-temperature (PVT) variations, where it achieves stable performances via the utilization of the proposed tuning mechanisms, mainly contributed by the proposed transformer-integrated tunable-output impedance matching network.

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“…The Class‐J mode is usually biased as Class‐B or deep Class AB PA whereby the transistor functions as a current generator such that the RF current waveform is a half‐wave rectified sinewave . The matching network is low pass filter structures aimed at blocking all components of harmonics than the fundamental.…”

Section: Class‐j Power Amplifier Theorymentioning

confidence: 99%

High‐power broadband graphene non‐Foster circuit enabled class‐J GaN HEMT power amplifier

Akwuruoha

2018

Micro & Optical Tech Letters

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This paper presents high-power broadband graphene non-Foster circuit (NFC) enabled Class-J GaN HEMT power amplifier (PA). A graphene resonant-tunneling diode (RTD) NFC is proposed to provide negative differential resistance characteristics and to create an effective negative capacitance. The NFC is integrated in the input matching network of the Class-J GaN HEMT PA to cancel out the transistor input parasitic capacitance so as to enhance PA bandwidth, efficiency, output power, and gain. The PA design is based on Cree's packaged GaN HEMT CGHV40030F biased with drain supply voltage of 50 V at quiescent drain-to-source current of 44 mA. The PA operates from 3.4 to 4.0 GHz with center frequency of 3.7 GHz. The effective negative capacitance of the NFC from 3.4 to 4.0 GHz stands at −3.3 to −6.0 pF. An effective capacitance of −3.7 pF has been obtained at 3.7 GHz. The PA has small signal gain of 16.1 dB at 3.7 GHz. Large signal simulation input power sweep from 1 to 33 dBm at 3.7 GHz, indicates that the PA has 57.8% drain efficiency, 54.7% power added efficiency (PAE), 44.6 dBm (28.8 W) output power and 11.6 dB transducer power gain at input power of 33 dBm. K E Y W O R D S broadband, class-J, GaN HEMT power amplifier, graphene non-Foster circuit, high power

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Broadband CMOS Stacked RF Power Amplifier Using Reconfigurable Interstage Network for Wideband Envelope Tracking

Cited by 31 publications

References 19 publications

Design of Broadband, High-Efficiency, and High-Linearity Gan Hemt Class-J Rf Power Amplifier

Design of Broadband, High-Efficiency, and High-Linearity Gan Hemt Class-J Rf Power Amplifier

A Wide-Bandwidth PVT-Reconfigurable CMOS Power Amplifier with an Integrated Tunable-Output Impedance Matching Network

High‐power broadband graphene non‐Foster circuit enabled class‐J GaN HEMT power amplifier

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