Bottom-up nanoscale patterning and selective deposition on silicon nanowires

Mohabir, Amar; Aziz, Daniel; Brummer, Amy; Taylor, Kathleen; Vogel, Eric M.; Filler, Michael A.

doi:10.1088/1361-6528/ac3bed

Cited by 3 publications

(1 citation statement)

References 43 publications

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“…The downscaling of integrated circuits in the semiconductor industry requires extremely accurate deposition and patterning of materials . Feature alignment at the nanometer level during the fabrication of state-of-the-art semiconductor devices has become a bottleneck in the advancement to smaller transistor nodes. − As a solution, the use of area-selective deposition (ASD) in self-aligned fabrication schemes is being explored in industry and academia. − ASD aims at selective deposition of a material on a patterned substrate, such that growth only occurs on the surfaces where deposition is desired (i.e., the growth area), while the growth is blocked on the rest of the substrate (the non-growth area). As a result, ASD allows for bottom-up and self-aligned deposition with respect to underlying device layers.…”

Section: Introductionmentioning

confidence: 99%

Relation between Reactive Surface Sites and Precursor Choice for Area-Selective Atomic Layer Deposition Using Small Molecule Inhibitors

et al. 2022

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Implementation of vapor/phase dosing of small molecule inhibitors (SMIs) in advanced atomic layer deposition (ALD) cycles is currently being considered for bottom-up fabrication by area-selective ALD. When SMIs are used, it can be challenging to completely block precursor adsorption due to the inhibitor size and the relatively short vapor/phase exposures. Two strategies for precursor blocking are explored: (i) physically covering precursor adsorption sites, i.e., steric shielding, and (ii) eliminating precursor adsorption sites from the surface, i.e., chemical passivation. In this work, it is determined whether steric shielding is enough for effective precursor blocking during area-selective ALD or whether chemical passivation is required as well. At the same time, we address why some ALD precursors are more difficult to block than others. To this end, the blocking of the Al precursor molecules trimethylaluminum (TMA), dimethylaluminum isopropoxide (DMAI), and tris(dimethylamino)aluminum (TDMAA) was studied by using acetylacetone (Hacac) as inhibitor. It was found that DMAI and TDMAA are more easily blocked than TMA because they adsorb on the same surface sites as Hacac, while TMA is also reactive with other surface sites. This work shows that chemical passivation plays a crucial role for precursor blocking in concert with steric shielding. Moreover, the reactivity of the precursor with the surface groups on the non-growth area dictates the effectiveness of blocking precursor adsorption.

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Section: Introductionmentioning

confidence: 99%

Relation between Reactive Surface Sites and Precursor Choice for Area-Selective Atomic Layer Deposition Using Small Molecule Inhibitors

et al. 2022

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An aluminum-based hybrid film photoresist for advanced lithography by molecular layer deposition

Wang,

Guo,

Shan

et al. 2024

J. Mater. Chem. C

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Investigating wet chemical oxidation methods to form SiO2 interlayers for self-aligned Pt-HfO2-Si gate stacks

Brummer

Kurup

Aziz

et al. 2023

Journal of Vacuum Science &Amp; Technology A

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Self-aligned metal-oxide-semiconductor (MOS) capacitors are studied with several low-temperature, wet chemical silicon dioxide (SiO2) interlayers to understand their impact on electrical performance. Self-aligned MOS capacitors are fabricated with a bottom-up patterning technique that uses a poly(methyl methacrylate) brush and dopant-selective KOH etch combined with area-selective atomic layer deposition of hafnium dioxide (HfO2) and Pt. The wet chemical pretreatments used to form the SiO2 interlayer include hydrofluoric acid (HF) etch, 80 °C H2O, and SC-2. Capacitance-voltage measurements of these area-selective capacitors exhibit a HfO2 dielectric constant of ∼19, irrespective of pretreatment. After a forming gas anneal, the average interface state density decreased between 1.8 and 7.5 times. The minimum observed Dit is 1 × 1011 eV−1 cm−2 for the HF-last treatment. X-ray photoelectron spectroscopy shows an increase in stoichiometric SiO2 in the interfacial layer after the anneal. Additional carbon is also observed; however, comparison with capacitors fabricated in a nonselective process reveals minimal impact on performance.

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Bottom-up nanoscale patterning and selective deposition on silicon nanowires

Cited by 3 publications

References 43 publications

Relation between Reactive Surface Sites and Precursor Choice for Area-Selective Atomic Layer Deposition Using Small Molecule Inhibitors

Relation between Reactive Surface Sites and Precursor Choice for Area-Selective Atomic Layer Deposition Using Small Molecule Inhibitors

An aluminum-based hybrid film photoresist for advanced lithography by molecular layer deposition

Investigating wet chemical oxidation methods to form SiO2 interlayers for self-aligned Pt-HfO2-Si gate stacks

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