Bottom‐Gate Approach for All Basic Logic Gates Implementation by a Single‐Type IGZO‐Based MOS Transistor with Reduced Footprint

Abstract

Logic functions are the key backbone in electronic circuits for computing applications. Complementary metal‐oxide‐semiconductor (CMOS) logic gates, with both n‐type and p‐type channel transistors, have been to date the dominant building blocks of logic circuitry as they carry obvious advantages over other technologies. Important physical limits are however starting to arise, as the transistor‐processing technology has begun to meet scaling‐down difficulties. To address this issue, there is the crucial need for a next‐generation electronics era based on new concepts and designs. In this respect, a single‐type channel multigate MOS transistor (SMG‐MOS) is introduced holding the two important aspects of processing adaptability and low static dissipation of CMOS. Furthermore, the SMG‐MOS approach strongly reduces the footprint down to 40% or even less area needed for current CMOS logic function in the same processing technology node. Logic NAND, NOT, AND, NOR, and OR gates, which typically require a large number of CMOS transistors, can be realized by a single SMG‐MOS transistor. Two functional examples of SMG‐MOS are reported here with their analysis based both on simulations and experiments. The results strongly suggest that SMG‐MOS can represent a facile approach to scale down complex integrated circuits, enabling design flexibility and production rates ramp‐up.

Light/electric modulated approach for logic functions and artificial synapse behaviors by flexible IGZO TFTs with low power consumption

“…In wearable electronic devices, reducing size and power consumption have always been two key technical requirements for such products [13][14][15]. Among them, the logic circuit is an indispensable part of the circuit system to realize the information processing function, and it is also the part with higher energy consumption [16,17]. Here, we propose implementing two kinds of logic functions based on a single transistor in the light/electricity synergy, including 'AND' and 'OR' logic operations.…”

Multi-functional multi-gate one-transistor process-in-memory electronics with foundry processing and footprint reduction

“…As described in Fig. 3, compared to the existing memory designs, including memristors, magnetic RAMs, phasechange RAMs, and ferroelectric RAMs [21][22][23][24][25][26][27][28][29] , the proposed onetransistor memory device structure does not involve any capacitors, resistors, or advanced materials. Besides the much simpler structure, the MGT design possesses superior properties of shorter reading and writing time (both ~5 ns), as shown in Supplementary Fig.…”

“…However, using the transistor side-gate design does not reduce the device footprint in the circuits, and none of the existing multi-gate designs aimed to reduce the transistor number for circuit simplification. In recent works, we proposed advanced designs to reduce the number of transistors used in a circuit, thereby effectively solving the downsizing problem in modern electronics 3,21,22 . Our previous works reported the simulation result 3 , and the bottom-gate structure of indium gallium zinc oxide transistor was mainly implemented in the lab with limited functions 21,22 .…”

“…In recent works, we proposed advanced designs to reduce the number of transistors used in a circuit, thereby effectively solving the downsizing problem in modern electronics 3,21,22 . Our previous works reported the simulation result 3 , and the bottom-gate structure of indium gallium zinc oxide transistor was mainly implemented in the lab with limited functions 21,22 . Here, the proposed design is a top gate structure with process-in-memory function, which is compatible with and implemented by the Si-foundry lines processing, thus promising immediate and practical applications.…”

“…Memory design is another rapidly progressing frontier in modern electronics with pioneering proposals, such as magnetic random-access memories (MRAMs), phase-change memories, ferroelectric RAMs, and resistive switching memristors [22][23][24][25][26][27][28][29] . However, the existing devices require dedicated materials and the fabrication costs are often much higher than the standard Si processes.…”