Multi-functional multi-gate one-transistor process-in-memory electronics with foundry processing and footprint reduction

Abstract

Logic gates are fundamental components of integrated circuits, and integration strategies involving multiple logic gates and advanced materials have been developed to meet the development requirements of high-density integrated circuits. However, these strategies are still far from being widely applicable owing to their incompatibility with the modern silicon-based foundry lines. Here, we propose a silicon-foundry-line-based multi-gate one-transistor design to simplify the conventional multi-transistor logic gates into one-transistor gates, thus reducing the circuit footprint by at least 40%. More importantly, the proposed configuration could simultaneously provide the multi-functionalities of logic gates, memory, and artificial synapses. In particular, our design could mimic the artificial synapses in three dimensions while simultaneously being implemented by standard silicon-on-insulator process technology. The foundry-line-compatible one-transistor design has great potential for immediate and widespread applications in next-generation multifunctional electronics.

Proton-Gated Synaptic Transistors, Based on an Electron-Beam Patterned Nafion Electrolyte

“…17,25 Several groups have shown various synaptic behaviors in chitosan-based EGTs with an indium− tin-oxide (ITO) or indium−zinc-oxide (IZO) channel, 17,23 Nafion-based EGTs with a poly(3,4-ethylene-dioxythiophene): polystyrenesulfonate (PEDOT:PSS) or tungsten oxide (WO 3 ) channel, 22,24,25 and MSC-based EGTs with an ITO channel. 26,27 Note that synaptic functions can be achieved in transistors without the use of electrolytes or ferroelectric gates, as recently demonstrated by Dai et al 28 Nafion is a proton-conducting polymer that possesses a high ionic conductivity, higher than 10 −2 S cm −1 , as well as excellent chemical and mechanical stability under harsh conditions. However, in all the above-mentioned works, the proton conductor materials were formed by spin-coating, hot-pressing, or dipping into electrolyte solutions.…”

“…Synaptic functions have been emulated in two-terminal devices such as phase change memory, , resistive random-access memory, − atomic switches, , magnetoresistive random-access memory, , and in three-terminal devices such as electrolyte-gated transistors (EGTs), − and ferroelectric field effect transistors. − Of the various EGTs, proton-gated transistors are considered to be one of the core elements for building physical neural networks because of their favorable characteristics, such as low power consumption (down to aJ), smaller charge carriers, faster operation, and compatibility with flexible electronics. , In these devices, organic and inorganic electrolytes such as chitosan, Nafion, and mesoporous silica (MSC) have been used as the gate electrolyte, which acts as proton (H + ) conductors and reservoirs. ,− Protons with an ionic radius of 0.04 Å have a higher diffusion rate than other ions, leading to faster operation of EGTs by interfacial ionic effects such as proton insertion and extraction without affecting the stability of the channel material. , Several groups have shown various synaptic behaviors in chitosan-based EGTs with an indium–tin-oxide (ITO) or indium–zinc-oxide (IZO) channel, , Nafion-based EGTs with a poly­(3,4-ethylene-dioxythiophene): polystyrenesulfonate (PEDOT:PSS) or tungsten oxide (WO 3 ) channel, ,, and MSC-based EGTs with an ITO channel. , Note that synaptic functions can be achieved in transistors without the use of electrolytes or ferroelectric gates, as recently demonstrated by Dai et al…”

Inorganic Halide Perovskite Quantum Dots: A Versatile Nanomaterial Platform for Electronic Applications

“…This limitation of processor speed, due to the constraint of memory performance, is called "Memory Wall" [158,168]. Accordingly, new types of device architectures have been designed and built [169,170], including resistive switching random access memory (RRAM) [171], phase-change memory (PCM) [172], nonvolatile floating-gate transistor memory (NVFGM) [173], and ferroelectric random access memory (FRAM) [174]. Among them, RRAM shows excellent potential for neuromorphic systems, logic operation, and data storage.…”

Room‐Temperature‐Processable Highly Reliable Resistive Switching Memory with Reconfigurability for Neuromorphic Computing and Ultrasonic Tissue Classification

“…[6] Processing-in-memory (PIM) architecture is a promising solution to resolve those difficulties by collocating its processor and storage. [7][8][9][10][11] Especially, a crossbar array of analog two-terminal memory devices, composed of resistive switching (RS) materials exhibiting tunable resistances, has emerged as a leading candidate to construct this architecture using those devices as synaptic elements of an ANN. [3] Many research works have been conducted to reveal their operating mechanisms and various types of RS materials are developed.…”