Boron Implant Isolation For High Temperature GaAs Integrated Circuits

Abstract

This paper reports on the temperature stability of B § implant isolation in GaAs MESFET type structures, passivated with PECVD SigN4 and using high temperature ohmic contacts. Measurements of the isolation resistance at ambient temperatures up to 400~ are presented. The stability of the isolation implant is demonstrated by 1 h annealing at temperatures up to 700~