High Temperature Electronics 1997
DOI: 10.1007/978-1-4613-1197-3_8
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GaAs high temperature devices

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“…It is commonly recognized [ 1 – 5 ] that the high temperature electronics should be based on wide band-gap materials. This is because of the thermal stability of their electrical parameters at elevated temperatures.…”
Section: Introductionmentioning
confidence: 99%
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“…It is commonly recognized [ 1 – 5 ] that the high temperature electronics should be based on wide band-gap materials. This is because of the thermal stability of their electrical parameters at elevated temperatures.…”
Section: Introductionmentioning
confidence: 99%
“…In previous papers we have shown that Hall sensor structures made of such thin films are excellent materials for the preparation of HS designed for working both in the low temperature range (2–250 K) [ 14 ] and in the high temperature range (273–573 K) [ 15 ]. Therefore, the main tasks of the present work were the optimization of the sensor structure parameters and the elaboration of the sensor package for the temperature range 2–573 K. In the case of the HT electronics, the HT package is a serious problem that has to be separately solved for a given device type [ 1 – 5 ]. Here we give the description of the parameters and characteristics of an ETHS equipped in an ET package, and not the ETHS sensitive structure only.…”
Section: Introductionmentioning
confidence: 99%