Boron-doped diamond-like amorphous carbon as photovoltaic films in solar cell

Ma, Zhongquan; Liu, B.X.

doi:10.1016/s0927-0248(00)00400-1

Cited by 90 publications

(33 citation statements)

References 18 publications

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“…p-type while silicon substrate acted as an n-type which formed the rectifying behaviour. The same trend behaviour of heterojunction carbon solar cell were obtained by others but fabricated using different method and precursor [12][13][14]. Beside forming of diode behaviour, precursor of palm oil has a good potential in fabricated photovoltaic carbon solar cell in the near future as proved in Fig.…”

Section: Methodssupporting

confidence: 76%

“…Low values of V OC , and J SC are believed from low built-in voltage which caused by defects in a-C:B thin film and thus influenced the shorter lifetime and diffusion length and movement of drift carriers. The drift of carriers by built-in electric field plays an important role in cells [12][13][14]. Less of drift carriers might be due to the smaller built in voltage and therefore electron-hole pairs generated are recombined near surface.…”

Section: Current Density-voltage Characteristic Under Illuminationmentioning

confidence: 99%

“…Less of drift carriers might be due to the smaller built in voltage and therefore electron-hole pairs generated are recombined near surface. The shorter lifetime of excess carriers and diffusion length are responsible for the low photocurrent [13][14][15]. The existing of weakly pi (π) [15][16][17] bond are easy to be broken and therefore, form high density of intrinsic defect.…”

Section: Current Density-voltage Characteristic Under Illuminationmentioning

confidence: 99%

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Fabrication of a-C:B/n-Si Solar Cells with Low Positive Bias by Using Palm Oil Precursor

et al. 2015

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Boron doped amorphous carbon (a-C:B) film for heterojunction carbonbased photovoltaic solar cells were successfully fabricated on n-type silicon using palm oil precursor by the influenced of low positive bias voltage in the range of 0-50 V. The rectifying curve were found for all samples under dark measurement revealed that those samples were p-type semiconductor. The +30 V was found the optimized of the electronic properties with the open circuit voltage, current density, fill factor and efficiency were approximately 0.259034 V, 1.299456 mA/cm 2 , 0.240011 and 0.080788 %, respectively. The conversion efficiency of a-C:B has been improved under the influenced of low positive bias.

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Section: Methodssupporting

confidence: 76%

Section: Current Density-voltage Characteristic Under Illuminationmentioning

confidence: 99%

Section: Current Density-voltage Characteristic Under Illuminationmentioning

confidence: 99%

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Fabrication of a-C:B/n-Si Solar Cells with Low Positive Bias by Using Palm Oil Precursor

et al. 2015

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“…Owing to these properties, DLCs are extensively used in diverse fields such as wear coatings, microelectronics, microtribology and biomedical technology. However their insulating properties and wide band gap lead to limitation of their applications in electronics (unless the charge carriers are incorporated into them [21][22][23][24][25]). Compounds with various boron to carbon stoichiometries and a the ratio higher than 2 are known as boron carbides.…”

Section: Introductionmentioning

confidence: 99%

RETRACTED: Application of the HFCVD technique for growth of nano-rods and nano-crystals

Elahi

Ghoranneviss

2015

Journal of Crystal Growth

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“…The application of a-C on the semiconductor field was the subject of many investigations [21,22]. However, undoped a-C is weakly p-type [23] in nature, and the complex structure and presence of high density of defects restrict its ability to dope efficiently and are the main barrier for its application in various electronic devices, such as PV cells.…”

Section: Introductionmentioning

confidence: 99%

Improved Photovoltaic Properties of Heterojunction Carbon Based Solar Cell

Adhikari¹,

Kayastha²,

Ghimire³

et al. 2013

JSEMAT

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Amorphous carbon (a-C) thin films have been synthesized by microwave (MW) surface wave plasma (SWP) chemical vapor deposition (CVD) on n-type silicon and quartz substrates, aiming at the application of the films for photovoltaic solar cells. Argon, acetylene and trimethylboron were used as a carrier, source and dopant gases. Analytical methods such as X-ray photoelectron spectroscopy (XPS), Hall Effect measurement, JASCO V-570 UV/VIS/NIR spectroscopy, Raman spectroscopy, Transmission electron microscopy (TEM) and Solar simulator were employed to investigate chemical, optical, structural and electrical properties of the a-C films. Two types of solar cells of configuration p-C/n-Si and p-C/i-C/n-Si have been fabricated and their current-voltage characteristics under dark and illumination (AM 1.5, 100 mW/cm 2 ) have been studied. The two solar cells showed rectifying curves under the dark condition confirming the heterojunction carbon based solar cell between p-C and n-Si. When illuminated by the solar simulator light the devices showed photovoltaic behavior. The heterojunction device (p-C/i-C/n-Si) having inserted intrinsic carbon film between p-C and n-Si exhibited significant enhancement of the conversation efficiency (0.167% to 2.349%) over the device (p-C/n-Si).

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Boron-doped diamond-like amorphous carbon as photovoltaic films in solar cell

Cited by 90 publications

References 18 publications

Fabrication of a-C:B/n-Si Solar Cells with Low Positive Bias by Using Palm Oil Precursor

Fabrication of a-C:B/n-Si Solar Cells with Low Positive Bias by Using Palm Oil Precursor

RETRACTED: Application of the HFCVD technique for growth of nano-rods and nano-crystals

Improved Photovoltaic Properties of Heterojunction Carbon Based Solar Cell

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