Here we present a simple and novel approach of fabricating three dimensional (3D) n-Si nanowires (NWs) and poly(3-octylthiophene) hybrid solar cells incorporating carbon nanotubes (CNTs). Vertically aligned n-Si NWs arrays were fabricated by electroless chemical etching of a n-Si [1 1 1] wafer. n-Si NWs/poly(3-octylthiophene) hybrid solar cells were fabricated with and without functionalized CNTs incorporation. Fabricated solar cells incorporating CNTs show open circuit voltage (Voc), short circuit current density (Jsc) fill factor (FF) and conversion efficiency as 0.353, 7.85 mA cm−2, 22% and 0.61%, respectively. In fabricated devices n-Si NWs arrays form multiple heterojunctions with the polymer and provide efficient electron collection and transportation, whereas CNTs provide efficient hole transportation.
Single-walled carbon nanotubes (SWCNTs) and functionalized multiwalled carbon nanotubes (f-MWCNTs) are introduced together for photovoltaic application in a poly(3-octylthiophene)/n-Si heterojunction solar cell. The performance of the device was improved by manyfold by the incorporation of both SWCNTs and f-MWCNTs. The open circuit voltage (Voc), short circuit current density (Jsc), fill factor (FF), and power conversion efficiency (η) were 0.44 V, 6.16 mA/cm2, 36%, and 0.98%, respectively. Here, we expect that SWCNTs help in exciton dissociation and provide percolation paths for electron transfer, whereas f-MWCNTs provide efficient hole transportation. CNT incorporation yields better carrier mobility, easy exciton splitting, and suppression of charge recombination, thereby improving photovoltaic action.
This paper presents the application of cutting multiwalled carbon nanotubes (cut-MWNTs) in solar cell. Cutting of MWNTs is performed by plasma fluorination and followed by defluorination. Cut-MWNTs with lengths of 50–200nm are incorporated in a poly(3-octylthiophene)∕n-Si heterojunction solar cell. We found that a device fabricated with cut-MWNTs shows much better performance than that of a device with pristine MWNTs. The device with cut-MWNTs shows short circuit current density, open circuit voltage, fill factor, and power conversion efficiency as 7.65mA∕cm2, 0.23V, 31%, and 0.54%, respectively. Here, we proposed that cut-MWNTs provide efficient hole transportation having a few nanometer transportation path, hence suppressing recombination. Cut-MWNTs can be the solution to the shorting and shunting effects generally observed in the MWNT solar cell.
Multiwalled carbon nanotubes (MWNTs) were functionalized by oxygen plasma treatment. Photoelectron spectroscopy study of oxygen plasma treated MWNTs (O-MWNTs) shows surface modification with hydroxyl and carboxyl groups. C60 decoration of MWNTs were carried out by thermal evaporation and more dense distribution of C60 was achieved on O-MWNTs. C60 decorated MWNTs were combined with poly(3-octylthiophene) for photovoltaic device fabrication. The device with C60 decorated O-MWNTs shows short circuit current density (Jsc), open circuit voltage (Voc), fill factor, and power conversion efficiency (η) as 1.68mA∕cm2, 0.245V, 27%, and 0.11%, respectively. It is expected that C60 provide large surface area for photoexcitons dissociation and efficient electron transportation, whereas MWNTs provide efficient hole transportation.
With a combination of outstanding properties and a wide spectrum of applications, graphene has emerged as a significant nanomaterial. However, to realize its full potential for practical applications, a number of obstacles have to be overcome, such as low-temperature, transfer-free growth on desired substrates. In most of the reports, direct graphene growth is confined to either a small area or high sheet resistance. Here, an attempt has been made to grow large-area graphene directly on insulating substrates, such as quartz and glass, using magnetron-generated microwave plasma chemical vapor deposition at a substrate temperature of 300 °C with a sheet resistance of 1.3k Ω/□ and transmittance of 80%. Graphene is characterized using Raman microscopy, atomic force microscopy, scanning electron microscopy, optical imaging, UV–vis spectroscopy, and X-ray photoelectron spectroscopy. Four-probe resistivity and Hall effect measurements were performed to investigate electronic properties. Key to this report is the use of 0.3 sccm CO 2 during growth to put a control over vertical graphene growth, generally forming carbon walls, and 15–20 min of O 3 treatment on as-synthesized graphene to improve sheet carrier mobility and transmittance. This report can be helpful in growing large-area graphene directly on insulating transparent substrates at low temperatures with advanced electronic properties for applications in transparent conducting electrodes and optoelectronics.
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