Boron diffusion upon annealing of laser thermal processed silicon

Jones, K. S.; Kuryliw, E.; Murto, Robert W.; Rendon, M.J.; Talwar, S.

doi:10.1109/iit.2000.924103

Cited by 9 publications

(8 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The PAI also results in end-of-range (EOR) damage that lies beyond the a/c interface that does not get annealed during the laser annealing process. Jones et al [8], [9] have shown that these defects can cause transient enhanced diffusion of boron upon subsequent thermal processing, both within the doped region and in the crystalline silicon below it. In this work, we examine the impact of this EOR damage by laser annealing samples inside and past the process window.…”

Section: Introductionmentioning

confidence: 98%

The use of laser annealing to reduce parasitic series resistances in MOS devices

Takamura

Kim

Jain

et al. 2002

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference On

View full text Add to dashboard Cite

As the size of metal-oxide-semiconductor (MOS) devices continues to be scaled aggressively, new technologies must be developed in order to meet future device requirements. One area that faces serious challenges involves reducing the parasitic series resistances between the channel and the contact. In this work, we demonstrate that laser annealing is a potential alternative annealing technique to form ultra-shallow, low resistivity junctions. This method benefits from the ability to create abrupt, uniform dopant profiles with active concentrations that can exceed the equilibrium solubility limits.We also address some of the issues preventing its adaptation into the semiconductor-processing scheme, including the annealing of patterned structures, dopant deactivation and junction depth control.

show abstract

Section: Introductionmentioning

confidence: 98%

The use of laser annealing to reduce parasitic series resistances in MOS devices

Takamura

Kim

Jain

et al. 2002

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference On

View full text Add to dashboard Cite

show abstract

“…Plasma Immersion Ion Implantation (PIII) is thus an alternative doping technique for the elaboration of Ultra Shallow Junctions (USJ) on silicon wafers [1,[4][5][6]. In recent years, many studies have presented the potentiality of Laser Thermal Process (LTP) for the activation of ultra shallow junctions [7][8][9]. This technique shows that it is possible to obtain junctions of a few nanometers with high electrical activation.…”

Section: Introductionmentioning

confidence: 99%

Laser activation of Ultra Shallow Junctions (USJ) doped by Plasma Immersion Ion Implantation (PIII)

Vervisch

Larmande

Delaporte

et al. 2009

Applied Surface Science

View full text Add to dashboard Cite

“…16,23,24) However, the process of melting amorphous silicon only has a few drawbacks such as end of range (EOR) defects. 25,26) These defects are interstitial point defects residing just below the amorphous silicon/single crystalline interface, which cause stacking faults or twin defects and thus degrade the electrical properties of transistors. [25][26][27] In this study, we examine the impact of multi-pulse laser annealing on highly phosphorus-doped silicon samples by analyzing the microstructure, phosphorus distribution, strain, and electrical properties before and after laser annealing.…”

Section: Introductionmentioning

confidence: 99%

“…25,26) These defects are interstitial point defects residing just below the amorphous silicon/single crystalline interface, which cause stacking faults or twin defects and thus degrade the electrical properties of transistors. [25][26][27] In this study, we examine the impact of multi-pulse laser annealing on highly phosphorus-doped silicon samples by analyzing the microstructure, phosphorus distribution, strain, and electrical properties before and after laser annealing. The microstructures of the recrystallized silicon and the EOR region are observed via transmission electron microscopy (TEM).…”

Section: Introductionmentioning

confidence: 99%

Recrystallization and activation of ultra-high-dose phosphorus-implanted silicon using multi-pulse nanosecond laser annealing

Lee

Ryu

Park

et al. 2020

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Highly phosphorus-doped silicon source/drains are investigated to improve the performance of N-type metal-oxide-semiconductor field-effect transistors by decreasing their resistance and imparting strain to their channels. To find effective high temperature annealing for the activation of phosphorus in the source/drains, we apply single- and multi-pulse nanosecond laser annealing on highly phosphorus-doped silicon. The microstructure, strain, and electrical properties of highly phosphorus-doped silicon before and after laser annealing are analyzed. Our results demonstrate that the defects in both the recrystallized silicon and the end of range are decreased with 600 mJ cm−2 10-pulse annealing while considerable increase in phosphorus activation is achieved.

show abstract

Boron diffusion upon annealing of laser thermal processed silicon

Cited by 9 publications

References 3 publications

The use of laser annealing to reduce parasitic series resistances in MOS devices

The use of laser annealing to reduce parasitic series resistances in MOS devices

Laser activation of Ultra Shallow Junctions (USJ) doped by Plasma Immersion Ion Implantation (PIII)

Recrystallization and activation of ultra-high-dose phosphorus-implanted silicon using multi-pulse nanosecond laser annealing

Contact Info

Product

Resources

About