Recrystallization and activation of ultra-high-dose phosphorus-implanted silicon using multi-pulse nanosecond laser annealing

Abstract

Highly phosphorus-doped silicon source/drains are investigated to improve the performance of N-type metal-oxide-semiconductor field-effect transistors by decreasing their resistance and imparting strain to their channels. To find effective high temperature annealing for the activation of phosphorus in the source/drains, we apply single- and multi-pulse nanosecond laser annealing on highly phosphorus-doped silicon. The microstructure, strain, and electrical properties of highly phosphorus-doped silicon before and after laser annealing are analyzed. Our results demonstrate that the defects in both the recrystallized silicon and the end of range are decreased with 600 mJ cm−2 10-pulse annealing while considerable increase in phosphorus activation is achieved.