Boron carbonitride films deposited by pulsed laser ablation

Ion fluence dependence on chemical behavior of energetic deuterium implanted into oxygen-contained boron film

“…These peaks for both samples were attributed to B-B bond [8]. A broad peak located at 192 eV for Sample A was also observed, which indicates the formation of B-O bond as boron oxide [11]. The chemical shift of B-1s by D þ 2 implantation was not observed at any fluence for both samples.…”

Characterization of Boron Carbonitride (BCN) Thin Films Deposited by Radiofrequency and Microwave Plasma Enhanced Chemical Vapor Deposition

“…It might be due to the higher concentration of N atoms in these samples than that of the samples 1 and 3. The peak at 399.2 eV for samples 1 and 2 may be assigned to the N-C bonding [20] . Broadening of the peak to the higher binding energy for sample 1 may be due to N-O bonding reported at 401 eV [23] .…”

“…Broadening of the spectra suggests that B atoms have not only the BN 3 configurations but also other BN 3-x C x configurations (x =1, 2). The B1s peak of h-BN is reported at 190.2 eV [19] while the B1s peak positions of the B-C-N materials are fluctuated in the ranges from 188 to 191 eV [20,21] . This may be due to the variation of configurations in the B-C-N films.…”

Elastic properties of B-C-N films grown by N2-reactive sputtering from boron carbide targets

“…Several techniques such as RF magnetron sputtering, 23 pulsed laser deposition, 24 or chemical vapor deposition 25 have been used to deposit B-C-N compounds. One of the simplest processes is the preparation of ternary B-C-N films from B 4 C targets by N 2 -reactive sputtering, 26 in which the formation of hexagonal boron nitride was detected.…”