Elastic properties of B-C-N films grown by N2-reactive sputtering from boron carbide targets

Salas, E.; Riobóo, R. J. Jiménez; Sánchez-Marcos, J.; Jiménez-Villacorta, Félix; Muñoz-Martı́n, A.; Prieto, J. E.; Joco, V.; Prieto, C.

doi:10.1063/1.4837655

Cited by 11 publications

(6 citation statements)

References 49 publications

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“…BLS spectroscopy allows the investigation of thermally activated acoustic phonons (waves) in the GHz range of frequencies. BLS is a well established technique commonly used in nondestructive testing of elastic properties in bulk materials and thin films [33][34][35][36][37]. BLS has been also found as an excellent tool to characterize phonons propagation in the nm-scale systems, such as ultra-thin free standing membranes [13] and phononic crystals [3,5,38].…”

Section: Materials and Experimental Methodsmentioning

confidence: 99%

Acoustic phonon propagation in ultra-thin Si membranes under biaxial stress field

et al. 2014

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We report on stress induced changes in the dispersion relations of acoustic phonons propagating in 27 nm thick single crystalline Si membranes. The static tensile stress (up to 0.3 GPa) acting on the Si membranes was achieved using an additional strain compensating silicon nitride frame. Dispersion relations of thermally activated hypersonic phonons were measured by means of Brillouin light scattering spectroscopy. The theory of Lamb wave propagation is developed for anisotropic materials subjected to an external static stress field. The dispersion relations were calculated using the elastic continuum approximation and taking into account the acousto-elastic effect. We find an excellent agreement between the theoretical and the experimental dispersion relations.

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Section: Materials and Experimental Methodsmentioning

confidence: 99%

Acoustic phonon propagation in ultra-thin Si membranes under biaxial stress field

et al. 2014

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“…The inplane stretching sp 2 BN bond centred at 1370cm 1 and BO bonds centred at 1455cm 1 both locate within the scope of this broad peak, so this broad peak can be described as the overlap of BN and BO bonds according to the range and the shape of this peak. 12,18 These results suggest that BCN film annealed at 600C in air is oxidized, but the oxidation process is incomplete because of the existence of BN bond.…”

Section: Resultsmentioning

confidence: 95%

Air annealing effect on scratch behaviour of BCN films

Tang

et al. 2015

Surface Engineering

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Boron carbon nitride (BCN) films have been deposited by direct current unbalanced magnetron sputtering. The obtained amorphous films are annealed in air atmosphere with different temperatures from 200 to 800uC. The composition, microstructure, mechanical properties and scratch behaviour of BCN films were studied. The microstructures do not change significantly and mechanical properties decrease slightly when the annealing temperatures are below 400uC. The films are oxidised and mechanical properties decline rapidly when annealing temperature rises to 600uC. The scratch depth decrease and the highest critical load increases after the films are treated by air annealing below the oxidation temperature. The dominant deformation changes from elastic deformation to plastic deformation with the increase in annealing temperature. The coefficient of friction rise and surface smoothness decreases after BCN films are oxidised. BCN amorphous films have good interfacial adhesion before and after oxidation.

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“…At CMAM, the ERDA-TOF beam line was designed to maximize the current for these heavy ions and, thus, to assure good statistics under those conditions. Some representative studies carried out with this method have been the analysis of Cr/Si interfaces [26], the characterization of BCN films [27] or the compositional determination of metastable ZnON layers [28,29]. Figure 2 shows an example of this later case when using a 30 MeV I 5+ beam.…”

Section: High-energy Heavy Ionsmentioning

confidence: 99%

Current status and future developments of the ion beam facility at the centre of micro-analysis of materials in Madrid

et al. 2021

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We report on the current status of the ion beam laboratory of the Centre of Micro-Analysis of Materials at the Autonomous University of Madrid. The 5 MV accelerator facility provides MeV ion beams of any stable element. Six main beam lines are under operation, allowing the analysis and modification of materials through ion beam methods. Although the most demanded ions are H and He for standard Rutherford backscattering spectrometry and particle-induced X-ray emission experiments, many other analytical techniques and specific set-ups are available for users. The facility especially highlights for the use of high-energy heavy ions and microbeams, with important applications in material science, optics and electronics, biology, cultural heritage, and astrophysics. Ongoing upgrades of the facility are oriented to improve the quality of the service for external users and to face new scientific and technological challenges in areas such as advanced materials, space, energy and health. PACS. 29.17.+w Electrostatic, collective, and linear accelerators -79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces -81.70.-q Methods of materials testing and analysis -81.20.-n Methods of materials synthesis and materials processing

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Elastic properties of B-C-N films grown by N2-reactive sputtering from boron carbide targets

Cited by 11 publications

References 49 publications

Acoustic phonon propagation in ultra-thin Si membranes under biaxial stress field

Acoustic phonon propagation in ultra-thin Si membranes under biaxial stress field

Air annealing effect on scratch behaviour of BCN films

Current status and future developments of the ion beam facility at the centre of micro-analysis of materials in Madrid

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