Boost Up Mobility of Solution‐Processed Metal Oxide Thin‐Film Transistors via Confining Structure on Electron Pathways

Rim, You Seung; Chen, Huajun; Kou, Xiaolu; Duan, Hsin Sheng; Zhou, Huanping; Cai, Min; Kim, Hyun Jae; Yang, Yang

doi:10.1002/adma.201400529

Cited by 181 publications

(118 citation statements)

References 35 publications

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“…The bilayer channel scheme has received increasing attention among n-type oxide TFTs as it was found to be more promising than single-channel TFTs [57][58][59]. As a first attempt to examine such structure on p-type oxide TFTs, we explored the possibility of fabricating p-type transparent bilayer TFTs that consist of a combination of Cu 2 O and SnO as two separate active layers [60,61].…”

Section: Cu 2 O/sno Bilayer Tfts and Cmosmentioning

confidence: 99%

A review of recent advances in transparent p-type Cu2O-based thin film transistors

Al-Jawhari

2015

Materials Science in Semiconductor Processing

106

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Section: Cu 2 O/sno Bilayer Tfts and Cmosmentioning

confidence: 99%

A review of recent advances in transparent p-type Cu2O-based thin film transistors

Al-Jawhari

2015

Materials Science in Semiconductor Processing

106

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“…[30][31][32] Oxide semiconductors are leading candidates for n-type transistors and microelectronics with high yield and uniformity. [33][34][35][36] The high electron mobilities (> 10 cm 2 V −1 s −1 ) of oxide FETs guarantee high sensitivity and high signal-to-noise ratio in biosensing. 37,38 Also, the high tolerance of structural defects and the minimized band tail trapping 39 of oxide semiconductors allow oxide FETs to be processed at low temperature (< 350 o C) and solution processing is a convenient and feasible approach to deposit high-performance oxide semiconductors on a large scale at low cost.…”

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confidence: 99%

Quasi-Two-Dimensional Metal Oxide Semiconductors Based Ultrasensitive Potentiometric Biosensors

et al. 2017

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Ultrasensitive field-effect transistor-based biosensors using quasi-two-dimensional metal oxide semiconductors were demonstrated. Quasi-two-dimensional low-dimensional metal oxide semiconductors were highly sensitive to electrical perturbations at the semiconductor-bio interface and showed competitive sensitivity compared with other nanomaterial-based biosensors. Also, the solution process made our platform simple and highly reproducible, which was favorable compared with other nanobioelectronics. A quasi-two-dimensional InO-based pH sensor showed a small detection limit of 0.0005 pH and detected the glucose concentration at femtomolar levels. Detailed electrical characterization unveiled how the device's parameters affect the biosensor sensitivity, and lowest detectable charge was extrapolated, which was consistent with the experimental data.

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“…1 Recently, the solution processes have been developing rapidly due to their low cost and facile nature. [2][3][4][5][6] Normally, chemical conversion subsequent to deposition requires significant thermal energy, inevitably involving high temperature (>400°C) annealing to eliminate unwanted carbon, oxygen, hydrogen, and anions as the film densifies toward the target metal oxide. 7 Consequently, due to the high temperature requirements, substrate selection is limited, particularly polymer substrates for flexible electronics are largely excluded.…”

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confidence: 99%

Low-Impurity High-Performance Solution-Processed Metal Oxide Semiconductors via a Facile Redox Reaction

et al. 2015

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Metal oxide semiconductors realized using solution processes have received a great deal of attention because of their low cost and simple fabrication. One major problem associated with the solution approach is the presence of undesired impurity species introduced by precursor solutions. Here, we investigated the effects of impurities on the electrical properties and device performance of metal oxide semiconductor thin-film transistors. It was found that chlorine residues inhibit the formation of the oxide framework and impede electron transport in a chloride precursor-derived metal oxide. To minimize the impurity concentration and produce high-quality oxide semiconductors, we used perchloric acid to remove excess chlorine species in a facile redox reaction. After the removal of chlorine species, the oxygen lattice concentration increased from 53 to 62%, and the field-effect mobility of indium oxide thin-film transistors was improved by >20-fold. Furthermore, devices treated with perchloric acid showed superior electrical stability under bias stress tests, corresponding to an improved oxide quality.

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Boost Up Mobility of Solution‐Processed Metal Oxide Thin‐Film Transistors via Confining Structure on Electron Pathways

Cited by 181 publications

References 35 publications

A review of recent advances in transparent p-type Cu2O-based thin film transistors

A review of recent advances in transparent p-type Cu2O-based thin film transistors

Quasi-Two-Dimensional Metal Oxide Semiconductors Based Ultrasensitive Potentiometric Biosensors

Low-Impurity High-Performance Solution-Processed Metal Oxide Semiconductors via a Facile Redox Reaction

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