A review of recent advances in transparent p-type Cu2O-based thin film transistors

The Influence of Oxygen Flow Ratio on the Optoelectronic Properties of p-Type Ni1−xO Films Deposited by Ion Beam Assisted Sputtering

“…All of them present good n-type conductivity. However, producing p-type TCOs with high resistivity and low transparency has proven to be more elusive in contrast with n-type TCOs [10][11][12]. The slow development of p-type TCOs has limited the implementation of the transparent p-n junctions, which is of interest for use in photovoltaics and invisible electronic devices.…”

Green synthesis of Cu x O nanoscale MOS capacitors processed at low temperatures

“…Cupric oxide (CuO) is also a p-type oxide yet its narrower energy gap (E g =1.5-1.9 eV) inhibits the material transparency unless it was deposited as a very thin layer [3]. Copper oxide (Cu x O) thin films have been prepared by several techniques each of them has its own advantages and disadvantages [4][5][6][7][8]. Structural, optical and electrical properties of the deposited films are very dependent on the method used.…”

P-191L:Late-News Poster: Solution Processed P-Channel Oxide Thin Film Transistor Employing Metal Doped Nickel Oxide

“…Cuprous oxide (Cu 2 O), tin monoxide (SnO) and nonstoichiometric nickel oxide (NiO x ) demonstrate representative ptype characteristics with dispersive VBMs due to the hybridization of the metal orbitals and O 2p orbitals [7][8][9]. Cu 2 O is semi-transparent with a direct band gap of 2.1 eV, while SnO is a metastable phase that easily transforms to n-type tin oxide (SnO 2 ) phase [6] [7]. Meanwhile, NiO x shows high transparency with a band gap from 3.5 to 4.0 eV and excellent chemical stability [10].…”