Book Review: Nanoelectronics and Information Technology. By Rainer Waser (Ed.).

Metallic single-electron transistors (SETs) with niobium nanodots were fabricated, and their high-frequency rectifying characteristics were evaluated. By reducing the gap size of the electrodes and film deposition area to nanometer scale, improved SET characteristics with gate control, and better frequency response of the rectifying current with gentler decrease than 1/f at high frequency were achieved. The comparison between the characteristics of micrometer- and nanometer-size devices are made, and the reason for their differences are discussed with a help of simulation based on the experimentally extracted parameters.

Section: Resultsmentioning

confidence: 99%

High-frequency rectifying characteristics of metallic single-electron transistor with niobium nanodots

Iwata

Nishimura

Singh

et al. 2022

“…We have already studied the quadruple-dot devices by an analytical approach 25) by using the orthodox theory 1,[14][15][16][17][18]31,32) and acquired explicit CB conditions within five tunnel junctions at zero temperature. In this paper, with the help of the established formulas, the stability diagrams for various C g distributions are drawn on the V′ g −V′ plane in order to confirm SE pumping where V′ g and V′ are the normalized gate and biasing voltages, respectively.…”

Section: Introductionmentioning

confidence: 99%

Single-electron pumping in single-common-gate quadruple-dot devices with asymmetric gate capacitances

Imai¹,

Ito²

2019

Single-common-gate quadruple-dot single-electron devices with asymmetric gate capacitances (C g ) can transfer a single electron to a negativebiased electrode by alternating only one gate voltage. The pumping is possible for non-monotonic C g distributions such as saw-toothed and various random C g distributions, though the C g distributions of the previously reported common-gate triple-dot pumping devices are limited to monotonic ones. The maximum absolute value of negative-biasing voltage against which a single electron can be transferred is 0.2181•e/C j , where e is the elementary charge and C j is the junction capacitance. This is 2.7 times larger than the largest one in common-gate triple-dot pumping devices with a monotonic C g distribution.

“…First, explicit CB conditions for the quadruple-dot devices at zero temperature will be acquired by an analytical approach using the orthodox theory. 7,14,21,[24][25][26][27][28] Here, thermal effects, quantum effects, and the effects of parasitic charges are assumed to be negligible in order to focus on the tunneling sequences depending on the C j distributions. Cotunneling is also assumed to be negligible.…”

Section: Introductionmentioning

confidence: 99%

Anomalous single-electron transfer in common-gate quadruple-dot single-electron devices with asymmetric junction capacitances

Imai¹,

Ito²

2018

In this paper, anomalous single-electron transfer in common-gate quadruple-dot turnstile devices with asymmetric junction capacitances is revealed. That is, the islands have the same total number of excess electrons at high and low gate voltages of the swing that transfers a single electron. In another situation, two electrons enter the islands from the source and two electrons leave the islands for the source and drain during a gate voltage swing cycle. First, stability diagrams of the turnstile devices are presented. Then, sequences of single-electron tunneling events by gate voltage swings are investigated, which demonstrate the above-mentioned anomalous single-electron transfer between the source and the drain. The anomalous single-electron transfer can be understood by regarding the four islands as "three virtual islands and a virtual source or drain electrode of a virtual triple-dot device". The anomalous behaviors of the four islands are explained by the normal behavior of the virtual islands transferring a single electron and the behavior of the virtual electrode.