Body-Biasing Control on Zero-Temperature-Coefficient in Partially Depleted SOI MOSFET

Abstract

This work investigates the possibility to tune the Zero-Temperature-Coefficient (ZTC) points in partially depleted (PD) SOI nMOSFET technology by controlling the body-source forward bias (VBS). Measured transconductance and drain current in the saturation region at temperatures between 25 and 200 o C were observed for various body-source forward bias conditions. It is found that the variation of threshold voltage (VTH) with body bias has an influence on ZTC points. The measurement results show wide voltage-range of gate-voltage giving either the transconductance ZTC point (VGS,ZT Cg m ) or the drain-current ZTC point (VGS,ZT C I DS ), opening important opportunities in RF circuits design for high temperature applications.

Zero Temperature Coefficient of Current Gain Cutoff Frequency and Maximum Oscillation Frequency for Various SOI and Si Bulk MOSFETs

“…The analytical formulation for ZTC in SOI devices has been introduced by Osman et al in (6). The ZTC point is device-geometryindependent for a given process (1) but it depends on the body bias for body-contacted SOI devices (7). Basically, there are two ZTC points for a transistor, one for the drain current and the other for the transconductance, and in general they have different values in linear and in saturation regions.…”