Zero Temperature Coefficient of Current Gain Cutoff Frequency and Maximum Oscillation Frequency for Various SOI and Si Bulk MOSFETs

Emam, Mostafa; Vanhoenacker‐Janvier, Danielle; Raskin, Jean‐Pierre

doi:10.1149/1.3570787

Cited by 2 publications

(1 citation statement)

References 9 publications

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“…That specific bias condition is named the zero-temperature coefficient (ZTC) operating point of the transistor [26,27]. As demonstrated in [28,29], when the temperature stability of the RF performance of an IC is required, the transistors must not be biased at the peak of transconductance but at the transconductance ZTC point. Obviously, the price to pay is a slight degradation of the transistor RF performance.…”

Section: Low and High Temperature Performance Of Fd Soimentioning

confidence: 99%

Fully Depleted SOI Technology for Millimeter-Wave Integrated Circuits

Raskin

2022

IEEE J. Electron Devices Soc.

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Performances of high-frequency integrated circuits are directly linked to the analog and high frequency characteristics of the transistors, the quality of the back-end of line process as well as the electromagnetic properties of the substrate. Today, Partially Depleted Silicon-on-Insulator (SOI) MOSFET is the mainstream technology for RF SOI systems. Fully Depleted (FD) SOI MOSFET is foreseen as one of the most promising candidates for the development of future lower power wireless communication systems operating in the millimeter-wave range. The high frequency performances of FD SOI transistors are presented at room but also at cryogenic and high temperature. Recently published results for FD SOI switches and low noise amplifiers are summarized. And finally, the potential interest and challenges to move from standard to high resistivity FD SOI substrates are discussed.

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