Blue Shift of Photoluminescence Spectrum of Porous InP

Abstract

The samples of porous InP were grown up by a method of anode etching on a substrate (100) InP n-type. The samples were characterized by SEM and photoluminescence (PL) where a blue shift was observed in PL. To remove surface oxides from the surface of porous InP using the thermal cleaning of the samples in a stream of high purity hydrogen. Size of walls between pores which makes 3 - 11nm.

Analysis of the ways to provide ecological safety for the products of nanotechnologies throughout their life cycle

“…This leads to a considerable number of defects emerging on the boundary of the InN film and the substrate and, as a consequence, poor quality of the produced InN films. A porous layer of indium phosphide serves as a buffer that is able to take elastic deformations, which arise in the process of its formation and further cooling, and provide drainage for dislocations of mismatching [33,34].…”

Research of the influence of decomposition of wastes of polymers with nano inclusions on the atmosphere

“…Because their properties depend not on concentration only, but also on specific quantum-dimensional properties [33]. Thus, we can state that many scientists point to a potential danger of polymer materials and nanotechnology products for the environment and human health.…”

Forming the low­porous layers of indium phosphide with the predefined quality level

“…One of the promising directions is nanostructuring semiconductor surfaces with the view to forming a porous layer [9,10]. Porous structures are obtained on the surface of indium phosphide [11,12], gallium phosphide [13,14], gallium arsenide [15,16], silicon [17], germanium [18], etc. Nanostructures, formed on the surface of these semiconductors, demonstrate a variety of shapes, dimensions, and number of nanoobjects.…”