2010
DOI: 10.1016/j.physe.2010.01.029
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Blue shift of optical band gap in Er-doped ZnO thin films deposited by direct current reactive magnetron sputtering technique

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Cited by 44 publications
(12 citation statements)
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“…The low binding energy peak is assigned to lattice oxygen O 2− from the Zn-O, Cu-O and Fe-O linkages [28,29]. It is much stronger than the other two binding energy peaks, indicating that the majority of oxygen occurs as lattice oxygen O 2− in the ZnO/CuO/ZnFe 2 O 4 nanocomposite [33]. The middle binding energy peak is associated with O 2− in the oxygen-deficient regions, indicative of the presence of oxygen vacancies in the ZnO/CuO/ZnFe 2 O 4 nanocomposite [29].…”
Section: Characterizationmentioning
confidence: 96%
See 1 more Smart Citation
“…The low binding energy peak is assigned to lattice oxygen O 2− from the Zn-O, Cu-O and Fe-O linkages [28,29]. It is much stronger than the other two binding energy peaks, indicating that the majority of oxygen occurs as lattice oxygen O 2− in the ZnO/CuO/ZnFe 2 O 4 nanocomposite [33]. The middle binding energy peak is associated with O 2− in the oxygen-deficient regions, indicative of the presence of oxygen vacancies in the ZnO/CuO/ZnFe 2 O 4 nanocomposite [29].…”
Section: Characterizationmentioning
confidence: 96%
“…The middle binding energy peak is associated with O 2− in the oxygen-deficient regions, indicative of the presence of oxygen vacancies in the ZnO/CuO/ZnFe 2 O 4 nanocomposite [29]. The high binding energy peak is attributed to the absorbed oxygen species such as O 2 , H 2 O and CO 2 [33]; this peak is weaker than the other two binding energy peaks due to the high crystallinity of the ZnO/CuO/ZnFe 2 O 4 nanocomposite.…”
Section: Characterizationmentioning
confidence: 99%
“…1,2 However, the special intra-4f shell structure of Er atoms imposes restrictions on the PL at 1.54µm, which is exactly the problem researchers spend so much effort on solving. After a lot of attempts, [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] it's empirically known that a crystal field made by oxygen surrounding Er makes the intra-4f transition possible and even efficient; besides, choosing semiconductors with wide band gap could also enhance the PL. Taking the two factors above into account, the material zinc oxide (ZnO) incontrovertibly becomes a good choice.…”
Section: Introductionmentioning
confidence: 99%
“…We find that even temperatures below 600 • C also have great influence on ZnO film quality and PL characterizations in Er-doped ZnO film. In the past years, researchers have studied a lot about Er ions' PL (1.54µm) in ZnO thin films grown on Si substrate or quartz, [7][8][9][10][11][12][13][14][15][16][17][18] especially the enhancement of PL in films with Si-NC. [7][8][9][10][11]18 Most found Si-NC with specific size improved the efficiency of Er ions' PL (1.54µm).…”
Section: Introductionmentioning
confidence: 99%
“…The Er 3+ -doped semiconductors are the potential optoelectronic materials [7] due to the Er intra-4f shell transition with a photoemission at a wavelength of 1.54μm, which lies in the minimum loss region of silica-based optical fibers [8]. Up to now, physical doping methods such as ion implantation [9], laser ablation [10], magnetron sputtering [11], and high temperature calcinations [12] have mainly been used to introduce Er into ZnO substrate.Here, a laser ablation in ethanol has been used to prepare undoped and Er 3+ -doped ZnO. The structural and optical properties of the undoped and Er 3+ -doped ZnO was investigated.…”
Section: Introductionmentioning
confidence: 99%