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2022
DOI: 10.1039/d2tc02355e
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Black phosphorus-based nanohybrids for energy storage, catalysis, sensors, electronic/photonic devices, and tribological applications

Abstract: Black phosphorus (BP) has many unique properties including layer-dependent bandgap, high carrier mobility, large on-off current ratios, and distinctive anisotropy, making it suitable for nanoelectronic and optoelectronic devices. To overcome...

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Cited by 16 publications
(7 citation statements)
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“…One of the earliest methods of fabricating 2D materials is the exfoliation of monolayer graphene. With a thorough investigation of graphene and its related variants as well as other 2D materials with an analogous arrangement, such as the hexagonal boron nitride (h-BN), 112 TMDCs, 113 and “BP”, 114 mechanically exfoliated and incredibly nano structural devices with remarkable performance were produced. The excellent optical and optoelectronic capabilities of these 2D materials have attracted increased attention in the study of optoelectronic devices.…”
Section: Preparation Techniques For Heterojunctionsmentioning
confidence: 99%
“…One of the earliest methods of fabricating 2D materials is the exfoliation of monolayer graphene. With a thorough investigation of graphene and its related variants as well as other 2D materials with an analogous arrangement, such as the hexagonal boron nitride (h-BN), 112 TMDCs, 113 and “BP”, 114 mechanically exfoliated and incredibly nano structural devices with remarkable performance were produced. The excellent optical and optoelectronic capabilities of these 2D materials have attracted increased attention in the study of optoelectronic devices.…”
Section: Preparation Techniques For Heterojunctionsmentioning
confidence: 99%
“…Under the same gate voltage, less channel current can be produced in the devices, resulting in the backward drift of the transfer curve of the device, thus leading to an "erasing state." [44][45][46][47] Kelvin probe force microscopy (KPFM) was further used for real-space imaging of the charge carrier trapping process to investigate the trapping and de-trapping ability of the devices with polymer CP2 dielectric. As shown in Figure S16, Supporting Information, the average surface potential gradually increases at the scanning tip by −20 or +10, +15, +20 V bias to verify the electrons/holes trapping process, which is in agreement with the implications of holes accumulation from transfer characteristic results.…”
Section: Integrated Device Applicationsmentioning
confidence: 99%
“…[ 10 ] However, these reported systems have biological signal acquisition and signal processing parts separated, and the latter of which was usually based on classical von Neumann systems consuming a considerable amount of time and power. [ 11–16 ] Future development of intelligent HMI systems requires near‐sensor or in‐sensor neural computing solutions to allow real‐time sensory processing with low communication latency and low power consumption. In this sense, there is a great need to develop intelligent neuromuscular systems with intrinsic capabilities of neuromorphic perception and recognition, preferably implemented at the device level.…”
Section: Introductionmentioning
confidence: 99%