Newly Synthesized High‐k Polymeric Dielectrics with Cyclic Carbonate Functionality for Highly Stability Organic Field‐Effect Transistor Applications

Abstract

Organic field‐effect transistors (OFETs) with low‐voltage‐operating high‐stability are regarded as one of the key components of future electronics. However, it remains a challenge to enhance bias–stress stability, mechanical durability and environmental adaptability while reducing the operating voltage of the flexible OFETs. In this study, a new strategy of introducing high‐dipole‐moment groups into polymer side chains to enhance the intensity of polarization was proposed. This strategy can redirect cyclic carbonate side chains of high‐dipole groups under the action of electric fields and realize stable operation and efficient charge transfer. The experiments showed that high‐performance flexible OFETs were mainly attributed to the synthesized polymers through molecular structure designing which not only have high dielectric constant (k > 5) and high electrical insulating property but also favor the growth of organic semiconductor films. The flexible OFETs still showed excellent mechanical flexibility, high electrical, thermal and humidity stability. In addition, highly OFETs were applied into a floating‐gate memory with fullerene (C60) embedded charge memory layer and an integrated one‐transistor‐one‐transistor memory cell. They exhibited excellent memory performance with a large memory window (8.5 V), current ratio (103), stable retention (2 × 104 s), cyclic endurance (200 cycles), multi‐level memory (over 4 levels) and non‐destructivity.

Ferroelectrics‐Electret Synergetic Organic Artificial Synapses with Single‐Polarity Driven Dynamic Reconfigurable Modulation

“…Generally, the smooth surface morphology is highly desirable for gate dielectric application in transistors and therefore results in high‐quality semiconductor/dielectric interfacial properties. [ 38–40 ] As illustrated by the AFM measurement in Figure 1c(i,ii), the root mean square (RMS) roughness of the PVK film (1.36 nm) is about half of that of P(VDF‐TrFE‐CFE) film (2.61 nm). This finding indicates the PVK layer not only plays the role of an insulator but induces a certain passivation of the device.…”

A flexible floating-gate based organic field-effect transistor non-volatile memory based on F8BT/PMMA integrated floating-gate/tunneling layer

“…In addition, the pentacene organic semiconductor active layer was evaporated via the thermal evaporation deposition. Such core systems lower the degree of fracture or delamination in the repeated bending process while slightly affect the appearance of the memory device, showing the development prospect of the device in the flexible wearable field [54].…”

Ultrathin AlO x layer modified ferroelectric organic field-effect transistor for artificial synaptic characteristics

“…At a provided electric field of 150 V μm −1 , a pure P(VDF-TrFE-CTFE) film has a remanent polarization (P r ) score of roughly 4.5 mC m −2 , and in figure S3, the P r marginally rose from 4.9 to 5.7 mC m −2 as the thickness of the AlO X layers extended from 1 to 3 nm. The former demonstrates that there is little association between the considerable improvement in Fe-OFETs performance brought about by utilizing an AlO X layer and the crystalline nature of organic semiconductors [32,33]. According to the latter, the ultrathin AlO X layer prevents the suppression of the polarization fluctuation caused by the orientation difference of dipole moments among ferroelectric microcrystals, which consequently increases the mobility of the transistor (see figure S6) [22].…”