Most current studies of artificial synapses only mimic the static plasticity, which is far from achieving the complex behaviors of the human brain. The few reported dynamic reconfigurable synapses based on ambipolar transistors switch the operating states by voltages with opposite polarity, which impedes the development of highly efficient synaptic readout circuits. To improve the efficiency, flexibility, and biocompatibility of dynamic reconfigurable synapses, here a ferroelectrics-electret synergetic organic synaptic p-type transistor (FESOST) is devised. Owing to the synergetic action of ferroelectric polarization switching and charge capture, FESOST exhibits single-polarity driven dynamic reconfigurable operating states with different synaptic behaviors (potentiation and depression) in response to the same gate pulse in different modes (excitatory and inhibitory). In addition, various singlepolarity driven synaptic behaviors including short-term/long-term plasticity, paired-pulse facilitation/depression, spike-rate-dependent plasticity, and spike-number-dependent plasticity are also simulated. Finally, the reconfigurable artificial temperature perception system is simulated for the complex emotions of humans in response to different weather stimuli for people of different constitutions. The novel device architecture represents a major step forward in the development of dynamic, reconfigurable, high-efficiency, organic synapses.

Organic field‐effect transistors (OFETs) with low‐voltage‐operating high‐stability are regarded as one of the key components of future electronics. However, it remains a challenge to enhance bias–stress stability, mechanical durability and environmental adaptability while reducing the operating voltage of the flexible OFETs. In this study, a new strategy of introducing high‐dipole‐moment groups into polymer side chains to enhance the intensity of polarization was proposed. This strategy can redirect cyclic carbonate side chains of high‐dipole groups under the action of electric fields and realize stable operation and efficient charge transfer. The experiments showed that high‐performance flexible OFETs were mainly attributed to the synthesized polymers through molecular structure designing which not only have high dielectric constant (k > 5) and high electrical insulating property but also favor the growth of organic semiconductor films. The flexible OFETs still showed excellent mechanical flexibility, high electrical, thermal and humidity stability. In addition, highly OFETs were applied into a floating‐gate memory with fullerene (C60) embedded charge memory layer and an integrated one‐transistor‐one‐transistor memory cell. They exhibited excellent memory performance with a large memory window (8.5 V), current ratio (103), stable retention (2 × 104 s), cyclic endurance (200 cycles), multi‐level memory (over 4 levels) and non‐destructivity.