2019
DOI: 10.1002/adom.201970047
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Black Phosphorous Photodetectors: Black Phosphorous/Indium Selenide Photoconductive Detector for Visible and Near‐Infrared Light with High Sensitivity (Advanced Optical Materials 12/2019)

Abstract: Photodetectors based on vertically stacked indium selenide (InSe) layers on top of layered black phosphorous (BP) have been devised by Zhi‐Nan Guo, Han Zhang and co‐workers (see article number 1900020). These vertical‐structure photodetectors possess a wide response range from visible to near‐infrared, and they exhibit a relatively fast response and high responsivity. In addition, the environmental degradation of BP can be inhibited to a certain extent by the InSe capping.

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Cited by 4 publications
(2 citation statements)
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“…Photoelectric properties of transition metal dichalcogenides (TMDs) have a remarkable change, as bulk transforms into a monolayer or multilayers, which have high optical absorption rates and suitable band gaps. Photodetector-based monolayer transition metal dichalcogenides (TMDs) show high quantum efficiency and low response times [1,2,3,4,5,6,7,8,9,10,11,12]. Among these 2D materials, tungsten disulfide (WS 2 ) layers with high mobility of 1000 cm 2 ·v −1 ·s −1 , a high optical absorption coefficient of ca.…”
Section: Introductionmentioning
confidence: 99%
“…Photoelectric properties of transition metal dichalcogenides (TMDs) have a remarkable change, as bulk transforms into a monolayer or multilayers, which have high optical absorption rates and suitable band gaps. Photodetector-based monolayer transition metal dichalcogenides (TMDs) show high quantum efficiency and low response times [1,2,3,4,5,6,7,8,9,10,11,12]. Among these 2D materials, tungsten disulfide (WS 2 ) layers with high mobility of 1000 cm 2 ·v −1 ·s −1 , a high optical absorption coefficient of ca.…”
Section: Introductionmentioning
confidence: 99%
“…Herein, the low-energy region shows the π* peaks at 285 eV, indicating the presence of sp 2 bonds. Additionally, the high-energy region shows the σ* peak at 292 eV, indicating the presence of a crystal structure [55][56][57] .…”
Section: Characterization Of F-gnec Film-based E-skinmentioning
confidence: 99%